High performance n-type organic-inorganic nanohybrid semiconductors for flexible electronic devices

Yerok Park; Kyu S. Han; Byoung H. Lee; Sangho Cho; Kwang H. Lee; Seongil Im; Myung M. Sung

doi:10.1016/j.orgel.2010.11.026

High performance n-type organic-inorganic nanohybrid semiconductors for flexible electronic devices

Yerok Park, Kyu S. Han, Byoung H. Lee, Sangho Cho, Kwang H. Lee, Seongil Im, Myung M. Sung

Department of Physics

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of 150 °C by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good thermal and mechanical stability, good flexibility, transparent in the visible range, and excellent field effect mobility (>7cm²/V s) under low voltage operation (from -1 to 3 V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

Original language	English
Pages (from-to)	348-352
Number of pages	5
Journal	Organic Electronics
Volume	12
Issue number	2
DOIs	https://doi.org/10.1016/j.orgel.2010.11.026
Publication status	Published - 2011 Feb

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) funded by The Ministry of Education, Science and Technology (MEST) (No. 2009-0092807 ) and (No. 2010-0019125 ), and by Seoul R&BD program (ST090839) and by the IT R&D program of MKE/KEIT[10030559, Development of next generation high performance organic/nano materials and printing process technology] and by the Korea Research Foundation Grant funded by The Korea government (MOEHRD, Basic Research Promotion Fund) ( KRF-2007-313-C00383 ).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Chemistry(all)
Biomaterials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.orgel.2010.11.026

Cite this

@article{62687e0d31594989ac3ebde34e5403d3,

title = "High performance n-type organic-inorganic nanohybrid semiconductors for flexible electronic devices",

abstract = "We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of 150 °C by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good thermal and mechanical stability, good flexibility, transparent in the visible range, and excellent field effect mobility (>7cm2/V s) under low voltage operation (from -1 to 3 V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.",

author = "Yerok Park and Han, {Kyu S.} and Lee, {Byoung H.} and Sangho Cho and Lee, {Kwang H.} and Seongil Im and Sung, {Myung M.}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) funded by The Ministry of Education, Science and Technology (MEST) (No. 2009-0092807 ) and (No. 2010-0019125 ), and by Seoul R&BD program (ST090839) and by the IT R&D program of MKE/KEIT[10030559, Development of next generation high performance organic/nano materials and printing process technology] and by the Korea Research Foundation Grant funded by The Korea government (MOEHRD, Basic Research Promotion Fund) ( KRF-2007-313-C00383 ).",

year = "2011",

month = feb,

doi = "10.1016/j.orgel.2010.11.026",

language = "English",

volume = "12",

pages = "348--352",

journal = "Organic Electronics: physics, materials, applications",

issn = "1566-1199",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - High performance n-type organic-inorganic nanohybrid semiconductors for flexible electronic devices

AU - Park, Yerok

AU - Han, Kyu S.

AU - Lee, Byoung H.

AU - Cho, Sangho

AU - Lee, Kwang H.

AU - Im, Seongil

AU - Sung, Myung M.

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) funded by The Ministry of Education, Science and Technology (MEST) (No. 2009-0092807 ) and (No. 2010-0019125 ), and by Seoul R&BD program (ST090839) and by the IT R&D program of MKE/KEIT[10030559, Development of next generation high performance organic/nano materials and printing process technology] and by the Korea Research Foundation Grant funded by The Korea government (MOEHRD, Basic Research Promotion Fund) ( KRF-2007-313-C00383 ).

PY - 2011/2

Y1 - 2011/2

N2 - We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of 150 °C by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good thermal and mechanical stability, good flexibility, transparent in the visible range, and excellent field effect mobility (>7cm2/V s) under low voltage operation (from -1 to 3 V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

AB - We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of 150 °C by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good thermal and mechanical stability, good flexibility, transparent in the visible range, and excellent field effect mobility (>7cm2/V s) under low voltage operation (from -1 to 3 V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

UR - http://www.scopus.com/inward/record.url?scp=78650608110&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650608110&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2010.11.026

DO - 10.1016/j.orgel.2010.11.026

M3 - Article

AN - SCOPUS:78650608110

SN - 1566-1199

VL - 12

SP - 348

EP - 352

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

IS - 2

ER -

High performance n-type organic-inorganic nanohybrid semiconductors for flexible electronic devices

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this