High Performance of Low Band Gap Polymer-Based Ambipolar Transistor Using Single-Layer Graphene Electrodes

Jong Yong Choi, Woonggi Kang, Boseok Kang, Wonsuk Cha, Seon Kyoung Son, Youngwoon Yoon, Hyunjung Kim, Youngjong Kang, Min Jae Ko, Hae Jung Son, Kilwon Cho, Jeong Ho Cho, Bong Soo Kim

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23 Citations (Scopus)

Abstract

Bottom-contact bottom-gate organic field-effect transistors (OFETs) are fabricated using a low band gap pDTTDPP-DT polymer as a channel material and single-layer graphene (SLG) or Au source/drain electrodes. The SLG-based ambipolar OFETs significantly outperform the Au-based ambipolar OFETs, and thermal annealing effectively improves the carrier mobilities of the pDTTDPP-DT films. The difference is attributed to the following facts: (i) the thermally annealed pDTTDPP-DT chains on the SLG assume more crystalline features with an edge-on orientation as compared to the polymer chains on the Au, (ii) the morphological features of the thermally annealed pDTTDPP-DT films on the SLG electrodes are closer to the features of those on the gate dielectric layer, and (iii) the SLG electrode provides a flatter, more hydrophobic surface that is favorable for the polymer crystallization than the Au. In addition, the preferred carrier transport in each electrode-based OFET is associated with the HOMO/LUMO alignment relative to the Fermi level of the employed electrode. All of these experimental results consistently explain why the carrier mobilities of the SLG-based OFET are more than 10 times higher than those of the Au-based OTFT. This work demonstrates the strong dependence of ambipolar carrier transport on the source/drain electrode and annealing temperature. (Chemical Presented).

Original languageEnglish
Pages (from-to)6002-6012
Number of pages11
JournalACS Applied Materials and Interfaces
Volume7
Issue number10
DOIs
Publication statusPublished - 2015 Mar 18

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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    Choi, J. Y., Kang, W., Kang, B., Cha, W., Son, S. K., Yoon, Y., Kim, H., Kang, Y., Ko, M. J., Son, H. J., Cho, K., Cho, J. H., & Kim, B. S. (2015). High Performance of Low Band Gap Polymer-Based Ambipolar Transistor Using Single-Layer Graphene Electrodes. ACS Applied Materials and Interfaces, 7(10), 6002-6012. https://doi.org/10.1021/acsami.5b00747