Abstract
In this work, we demonstrate the high-performance of a PEDOT:PSS free organic photovoltaic cell (OPVC) using an air-plasma modified ITO surface, followed by controlled solvent evaporation and annealing of the P3HT:PCBM photoactive layer. Ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), and conductive atomic force microscopy (c-AFM) results show that the work function of ITO was increased to as high as that of PEDOT:PSS (5.2 eV) after air-plasma treatment, along with significantly enhanced electrical homogeneity. From the dynamic secondary ion mass spectroscopy (DSIMS) results, we confirm that the thermodynamic stability of the slow-dried active layer is attributed to the uniform vertical compositional distribution on the air plasma treated ITO surface, even after thermal annealing at 150 °C for 10 min. The resulting device has an open-circuit voltage of 0.65 V, a fill factor of 63%, and a power conversion efficiency of 3.38%, providing a high performance PEDOT:PSS free OPVC device.
| Original language | English |
|---|---|
| Pages (from-to) | 11047-11053 |
| Number of pages | 7 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 6 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2014 Jul 23 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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High-performance of PEDOT/PSS free organic solar cells on an air-plasma-treated ITO substrate. / Choi, Jong Kil; Jin, Ming Liang; An, Cheng Jin; Kim, Daewoo; Jung, Hee Tae.
In: ACS Applied Materials and Interfaces, Vol. 6, No. 14, 23.07.2014, p. 11047-11053.Research output: Contribution to journal › Article
TY - JOUR
T1 - High-performance of PEDOT/PSS free organic solar cells on an air-plasma-treated ITO substrate
AU - Choi, Jong Kil
AU - Jin, Ming Liang
AU - An, Cheng Jin
AU - Kim, Daewoo
AU - Jung, Hee Tae
PY - 2014/7/23
Y1 - 2014/7/23
N2 - In this work, we demonstrate the high-performance of a PEDOT:PSS free organic photovoltaic cell (OPVC) using an air-plasma modified ITO surface, followed by controlled solvent evaporation and annealing of the P3HT:PCBM photoactive layer. Ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), and conductive atomic force microscopy (c-AFM) results show that the work function of ITO was increased to as high as that of PEDOT:PSS (5.2 eV) after air-plasma treatment, along with significantly enhanced electrical homogeneity. From the dynamic secondary ion mass spectroscopy (DSIMS) results, we confirm that the thermodynamic stability of the slow-dried active layer is attributed to the uniform vertical compositional distribution on the air plasma treated ITO surface, even after thermal annealing at 150 °C for 10 min. The resulting device has an open-circuit voltage of 0.65 V, a fill factor of 63%, and a power conversion efficiency of 3.38%, providing a high performance PEDOT:PSS free OPVC device.
AB - In this work, we demonstrate the high-performance of a PEDOT:PSS free organic photovoltaic cell (OPVC) using an air-plasma modified ITO surface, followed by controlled solvent evaporation and annealing of the P3HT:PCBM photoactive layer. Ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), and conductive atomic force microscopy (c-AFM) results show that the work function of ITO was increased to as high as that of PEDOT:PSS (5.2 eV) after air-plasma treatment, along with significantly enhanced electrical homogeneity. From the dynamic secondary ion mass spectroscopy (DSIMS) results, we confirm that the thermodynamic stability of the slow-dried active layer is attributed to the uniform vertical compositional distribution on the air plasma treated ITO surface, even after thermal annealing at 150 °C for 10 min. The resulting device has an open-circuit voltage of 0.65 V, a fill factor of 63%, and a power conversion efficiency of 3.38%, providing a high performance PEDOT:PSS free OPVC device.
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U2 - 10.1021/am4049964
DO - 10.1021/am4049964
M3 - Article
AN - SCOPUS:84905054442
VL - 6
SP - 11047
EP - 11053
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 14
ER -