High-performance oxide thin-film transistors using a volatile nitrate precursor for low-temperature solution process

Woong Hee Jeong; Jung Hyeon Bae; Hyun Jae Kim

doi:10.1109/LED.2011.2173897

High-performance oxide thin-film transistors using a volatile nitrate precursor for low-temperature solution process

Woong Hee Jeong, Jung Hyeon Bae, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Solution-processed InZnO (IZO) thin-film transistors (TFTs) are fabricated using a volatile metal nitrate precursor (Np) with annealing at 300 °C. Because the metal Np decomposes at low temperatures, metal oxide bonds were formed, and the organic residue in the oxide thin films was evaporated at low temperature. At 300 °C, the IZO thin films with Zn Np were of higher quality than those with Zn acetate precursor due to the reduced atomic disorder and evaporation of residual organics. The mobility of the IZO TFTs with Zn Np was 1.92 cm ²/V s at 300 °C annealing.

Original language	English
Article number	6095583
Pages (from-to)	68-70
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	1
DOIs	https://doi.org/10.1109/LED.2011.2173897
Publication status	Published - 2012 Jan

Bibliographical note

Funding Information:
Manuscript received July 29, 2011; revised October 12, 2011; accepted October 22, 2011. Date of publication December 6, 2011; date of current version December 23, 2011. This work was supported by the National Research Foundation of Korea, Korean Ministry of Education, Science and Technology, under Grant 2007-0055837. The review of this letter was arranged by Editor W. S. Wong.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2173897

Cite this

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abstract = "Solution-processed InZnO (IZO) thin-film transistors (TFTs) are fabricated using a volatile metal nitrate precursor (Np) with annealing at 300 °C. Because the metal Np decomposes at low temperatures, metal oxide bonds were formed, and the organic residue in the oxide thin films was evaporated at low temperature. At 300 °C, the IZO thin films with Zn Np were of higher quality than those with Zn acetate precursor due to the reduced atomic disorder and evaporation of residual organics. The mobility of the IZO TFTs with Zn Np was 1.92 cm 2/V s at 300 °C annealing.",

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High-performance oxide thin-film transistors using a volatile nitrate precursor for low-temperature solution process

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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