Solution-processed InZnO (IZO) thin-film transistors (TFTs) are fabricated using a volatile metal nitrate precursor (Np) with annealing at 300 °C. Because the metal Np decomposes at low temperatures, metal oxide bonds were formed, and the organic residue in the oxide thin films was evaporated at low temperature. At 300 °C, the IZO thin films with Zn Np were of higher quality than those with Zn acetate precursor due to the reduced atomic disorder and evaporation of residual organics. The mobility of the IZO TFTs with Zn Np was 1.92 cm 2/V s at 300 °C annealing.
Bibliographical noteFunding Information:
Manuscript received July 29, 2011; revised October 12, 2011; accepted October 22, 2011. Date of publication December 6, 2011; date of current version December 23, 2011. This work was supported by the National Research Foundation of Korea, Korean Ministry of Education, Science and Technology, under Grant 2007-0055837. The review of this letter was arranged by Editor W. S. Wong.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering