High-performance oxide thin-film transistors using a volatile nitrate precursor for low-temperature solution process

Woong Hee Jeong, Jung Hyeon Bae, Hyun Jae Kim

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Solution-processed InZnO (IZO) thin-film transistors (TFTs) are fabricated using a volatile metal nitrate precursor (Np) with annealing at 300 °C. Because the metal Np decomposes at low temperatures, metal oxide bonds were formed, and the organic residue in the oxide thin films was evaporated at low temperature. At 300 °C, the IZO thin films with Zn Np were of higher quality than those with Zn acetate precursor due to the reduced atomic disorder and evaporation of residual organics. The mobility of the IZO TFTs with Zn Np was 1.92 cm 2/V s at 300 °C annealing.

Original languageEnglish
Article number6095583
Pages (from-to)68-70
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Thin film transistors
Nitrates
Oxide films
Metals
Annealing
Thin films
Temperature
Oxides
Evaporation
Acetates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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High-performance oxide thin-film transistors using a volatile nitrate precursor for low-temperature solution process. / Jeong, Woong Hee; Bae, Jung Hyeon; Kim, Hyun Jae.

In: IEEE Electron Device Letters, Vol. 33, No. 1, 6095583, 01.01.2012, p. 68-70.

Research output: Contribution to journalArticle

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