High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node

S. Suthram, P. Majhi, G. Sun, P. Kalra, H. R. Harris, K. J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B. J. Cho, M. M. Hussain, C. Smith, S. Banerjee, W. Tsai, S. E. Thompson, H. H. Tseng, R. Jammy

Research output: Contribution to journalConference article

19 Citations (Scopus)

Abstract

We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond.

Original languageEnglish
Article number4419049
Pages (from-to)727-730
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 2007 Dec 102007 Dec 12

Fingerprint

axial strain
Semiconductor quantum wells
Metals
quantum wells
metals
leakage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Suthram, S. ; Majhi, P. ; Sun, G. ; Kalra, P. ; Harris, H. R. ; Choi, K. J. ; Heh, D. ; Oh, J. ; Kelly, D. ; Choi, R. ; Cho, B. J. ; Hussain, M. M. ; Smith, C. ; Banerjee, S. ; Tsai, W. ; Thompson, S. E. ; Tseng, H. H. ; Jammy, R. / High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node. In: Technical Digest - International Electron Devices Meeting, IEDM. 2007 ; pp. 727-730.
@article{c580509752574b6296e912412f580eed,
title = "High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node",
abstract = "We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond.",
author = "S. Suthram and P. Majhi and G. Sun and P. Kalra and Harris, {H. R.} and Choi, {K. J.} and D. Heh and J. Oh and D. Kelly and R. Choi and Cho, {B. J.} and Hussain, {M. M.} and C. Smith and S. Banerjee and W. Tsai and Thompson, {S. E.} and Tseng, {H. H.} and R. Jammy",
year = "2007",
month = "12",
day = "1",
doi = "10.1109/IEDM.2007.4419049",
language = "English",
pages = "727--730",
journal = "Technical Digest - International Electron Devices Meeting",
issn = "0163-1918",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Suthram, S, Majhi, P, Sun, G, Kalra, P, Harris, HR, Choi, KJ, Heh, D, Oh, J, Kelly, D, Choi, R, Cho, BJ, Hussain, MM, Smith, C, Banerjee, S, Tsai, W, Thompson, SE, Tseng, HH & Jammy, R 2007, 'High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node', Technical Digest - International Electron Devices Meeting, IEDM, pp. 727-730. https://doi.org/10.1109/IEDM.2007.4419049

High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node. / Suthram, S.; Majhi, P.; Sun, G.; Kalra, P.; Harris, H. R.; Choi, K. J.; Heh, D.; Oh, J.; Kelly, D.; Choi, R.; Cho, B. J.; Hussain, M. M.; Smith, C.; Banerjee, S.; Tsai, W.; Thompson, S. E.; Tseng, H. H.; Jammy, R.

In: Technical Digest - International Electron Devices Meeting, IEDM, 01.12.2007, p. 727-730.

Research output: Contribution to journalConference article

TY - JOUR

T1 - High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node

AU - Suthram, S.

AU - Majhi, P.

AU - Sun, G.

AU - Kalra, P.

AU - Harris, H. R.

AU - Choi, K. J.

AU - Heh, D.

AU - Oh, J.

AU - Kelly, D.

AU - Choi, R.

AU - Cho, B. J.

AU - Hussain, M. M.

AU - Smith, C.

AU - Banerjee, S.

AU - Tsai, W.

AU - Thompson, S. E.

AU - Tseng, H. H.

AU - Jammy, R.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond.

AB - We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond.

UR - http://www.scopus.com/inward/record.url?scp=50249093257&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249093257&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2007.4419049

DO - 10.1109/IEDM.2007.4419049

M3 - Conference article

AN - SCOPUS:50249093257

SP - 727

EP - 730

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

M1 - 4419049

ER -