For the first time, Ni salicide process is applied directly on poly-Si0.8Ge0.2 gate, and pMOSFETs utilizing Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate are fully characterized. The excellent value (approximately 5 Ω/□) of sheet resistance is achieved from 0.15 μm Ni(SixGe1-x)/Si0.8Ge0.2 gate, while Co salicide process applied on Si0.8Ge0.2 gate results in Rs fail due to Ge segregation. It is also important to note that, with poly-Si0.8Ge0.2 gate and Ni salicide process, the current drivability of pMOSFETs is significantly improved due to less gate poly depletion and lower source-to-drain resistance(Rsd). Conclusively, Ni salicide is the exclusive process for successful germanosilicide formation on poly-Si0.8Ge0.2 gate without poly-Si buffer layer and Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate can increase Idsat of pMOSFETs by 20% as compared to conventional CoSi2/poly-Si gate structure.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 2000|
|Event||2000 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 2000 Jun 13 → 2000 Jun 15
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering