High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate

Ja Hum Ku, C. J. Choi, S. Song, S. Choi, K. Fujihara, H. K. Kang, S. I. Lee, H. G. Choi, Dae Hong Ko

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

For the first time, Ni salicide process is applied directly on poly-Si0.8Ge0.2 gate, and pMOSFETs utilizing Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate are fully characterized. The excellent value (approximately 5 Ω/□) of sheet resistance is achieved from 0.15 μm Ni(SixGe1-x)/Si0.8Ge0.2 gate, while Co salicide process applied on Si0.8Ge0.2 gate results in Rs fail due to Ge segregation. It is also important to note that, with poly-Si0.8Ge0.2 gate and Ni salicide process, the current drivability of pMOSFETs is significantly improved due to less gate poly depletion and lower source-to-drain resistance(Rsd). Conclusively, Ni salicide is the exclusive process for successful germanosilicide formation on poly-Si0.8Ge0.2 gate without poly-Si buffer layer and Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate can increase Idsat of pMOSFETs by 20% as compared to conventional CoSi2/poly-Si gate structure.

Original languageEnglish
Pages (from-to)114-115
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 2000 Jan 1
Event2000 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 2000 Jun 132000 Jun 15

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Polysilicon
Sheet resistance
Buffer layers

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ku, J. H., Choi, C. J., Song, S., Choi, S., Fujihara, K., Kang, H. K., ... Ko, D. H. (2000). High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate. Digest of Technical Papers - Symposium on VLSI Technology, 114-115.
Ku, Ja Hum ; Choi, C. J. ; Song, S. ; Choi, S. ; Fujihara, K. ; Kang, H. K. ; Lee, S. I. ; Choi, H. G. ; Ko, Dae Hong. / High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate. In: Digest of Technical Papers - Symposium on VLSI Technology. 2000 ; pp. 114-115.
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abstract = "For the first time, Ni salicide process is applied directly on poly-Si0.8Ge0.2 gate, and pMOSFETs utilizing Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate are fully characterized. The excellent value (approximately 5 Ω/□) of sheet resistance is achieved from 0.15 μm Ni(SixGe1-x)/Si0.8Ge0.2 gate, while Co salicide process applied on Si0.8Ge0.2 gate results in Rs fail due to Ge segregation. It is also important to note that, with poly-Si0.8Ge0.2 gate and Ni salicide process, the current drivability of pMOSFETs is significantly improved due to less gate poly depletion and lower source-to-drain resistance(Rsd). Conclusively, Ni salicide is the exclusive process for successful germanosilicide formation on poly-Si0.8Ge0.2 gate without poly-Si buffer layer and Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate can increase Idsat of pMOSFETs by 20{\%} as compared to conventional CoSi2/poly-Si gate structure.",
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Ku, JH, Choi, CJ, Song, S, Choi, S, Fujihara, K, Kang, HK, Lee, SI, Choi, HG & Ko, DH 2000, 'High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate', Digest of Technical Papers - Symposium on VLSI Technology, pp. 114-115.

High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate. / Ku, Ja Hum; Choi, C. J.; Song, S.; Choi, S.; Fujihara, K.; Kang, H. K.; Lee, S. I.; Choi, H. G.; Ko, Dae Hong.

In: Digest of Technical Papers - Symposium on VLSI Technology, 01.01.2000, p. 114-115.

Research output: Contribution to journalConference article

TY - JOUR

T1 - High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate

AU - Ku, Ja Hum

AU - Choi, C. J.

AU - Song, S.

AU - Choi, S.

AU - Fujihara, K.

AU - Kang, H. K.

AU - Lee, S. I.

AU - Choi, H. G.

AU - Ko, Dae Hong

PY - 2000/1/1

Y1 - 2000/1/1

N2 - For the first time, Ni salicide process is applied directly on poly-Si0.8Ge0.2 gate, and pMOSFETs utilizing Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate are fully characterized. The excellent value (approximately 5 Ω/□) of sheet resistance is achieved from 0.15 μm Ni(SixGe1-x)/Si0.8Ge0.2 gate, while Co salicide process applied on Si0.8Ge0.2 gate results in Rs fail due to Ge segregation. It is also important to note that, with poly-Si0.8Ge0.2 gate and Ni salicide process, the current drivability of pMOSFETs is significantly improved due to less gate poly depletion and lower source-to-drain resistance(Rsd). Conclusively, Ni salicide is the exclusive process for successful germanosilicide formation on poly-Si0.8Ge0.2 gate without poly-Si buffer layer and Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate can increase Idsat of pMOSFETs by 20% as compared to conventional CoSi2/poly-Si gate structure.

AB - For the first time, Ni salicide process is applied directly on poly-Si0.8Ge0.2 gate, and pMOSFETs utilizing Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate are fully characterized. The excellent value (approximately 5 Ω/□) of sheet resistance is achieved from 0.15 μm Ni(SixGe1-x)/Si0.8Ge0.2 gate, while Co salicide process applied on Si0.8Ge0.2 gate results in Rs fail due to Ge segregation. It is also important to note that, with poly-Si0.8Ge0.2 gate and Ni salicide process, the current drivability of pMOSFETs is significantly improved due to less gate poly depletion and lower source-to-drain resistance(Rsd). Conclusively, Ni salicide is the exclusive process for successful germanosilicide formation on poly-Si0.8Ge0.2 gate without poly-Si buffer layer and Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate can increase Idsat of pMOSFETs by 20% as compared to conventional CoSi2/poly-Si gate structure.

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M3 - Conference article

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JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

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ER -

Ku JH, Choi CJ, Song S, Choi S, Fujihara K, Kang HK et al. High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate. Digest of Technical Papers - Symposium on VLSI Technology. 2000 Jan 1;114-115.