High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate

Ja Hum Ku; C. J. Choi; S. Song; S. Choi; K. Fujihara; H. K. Kang; S. I. Lee; H. G. Choi; D. H. Ko

High performance pMOSFETs with Ni(Si_xGe_1-x)/poly-Si_0.8Ge_0.2 gate

Ja Hum Ku, C. J. Choi, S. Song, S. Choi, K. Fujihara, H. K. Kang, S. I. Lee, H. G. Choi, D. H. Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

For the first time, Ni salicide process is applied directly on poly-Si_0.8Ge_0.2 gate, and pMOSFETs utilizing Ni(Si_xGe_1-x)/poly-Si_0.8Ge_0.2 gate are fully characterized. The excellent value (approximately 5 Ω/□) of sheet resistance is achieved from 0.15 μm Ni(Si_xGe_1-x)/Si_0.8Ge_0.2 gate, while Co salicide process applied on Si_0.8Ge_0.2 gate results in R_s fail due to Ge segregation. It is also important to note that, with poly-Si_0.8Ge_0.2 gate and Ni salicide process, the current drivability of pMOSFETs is significantly improved due to less gate poly depletion and lower source-to-drain resistance(R_sd). Conclusively, Ni salicide is the exclusive process for successful germanosilicide formation on poly-Si_0.8Ge_0.2 gate without poly-Si buffer layer and Ni(Si_xGe_1-x)/poly-Si_0.8Ge_0.2 gate can increase I_dsat of pMOSFETs by 20% as compared to conventional CoSi₂/poly-Si gate structure.

Original language	English
Pages (from-to)	114-115
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 2000
Event	2000 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 2000 Jun 13 → 2000 Jun 15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

@article{f9d3460e59044583ae923c3fd216139f,

title = "High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate",

abstract = "For the first time, Ni salicide process is applied directly on poly-Si0.8Ge0.2 gate, and pMOSFETs utilizing Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate are fully characterized. The excellent value (approximately 5 Ω/□) of sheet resistance is achieved from 0.15 μm Ni(SixGe1-x)/Si0.8Ge0.2 gate, while Co salicide process applied on Si0.8Ge0.2 gate results in Rs fail due to Ge segregation. It is also important to note that, with poly-Si0.8Ge0.2 gate and Ni salicide process, the current drivability of pMOSFETs is significantly improved due to less gate poly depletion and lower source-to-drain resistance(Rsd). Conclusively, Ni salicide is the exclusive process for successful germanosilicide formation on poly-Si0.8Ge0.2 gate without poly-Si buffer layer and Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate can increase Idsat of pMOSFETs by 20% as compared to conventional CoSi2/poly-Si gate structure.",

author = "Ku, {Ja Hum} and Choi, {C. J.} and S. Song and S. Choi and K. Fujihara and Kang, {H. K.} and Lee, {S. I.} and Choi, {H. G.} and Ko, {D. H.}",

year = "2000",

language = "English",

pages = "114--115",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 Symposium on VLSI Technology ; Conference date: 13-06-2000 Through 15-06-2000",

}

TY - JOUR

T1 - High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate

AU - Ku, Ja Hum

AU - Choi, C. J.

AU - Song, S.

AU - Choi, S.

AU - Fujihara, K.

AU - Kang, H. K.

AU - Lee, S. I.

AU - Choi, H. G.

AU - Ko, D. H.

PY - 2000

Y1 - 2000

N2 - For the first time, Ni salicide process is applied directly on poly-Si0.8Ge0.2 gate, and pMOSFETs utilizing Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate are fully characterized. The excellent value (approximately 5 Ω/□) of sheet resistance is achieved from 0.15 μm Ni(SixGe1-x)/Si0.8Ge0.2 gate, while Co salicide process applied on Si0.8Ge0.2 gate results in Rs fail due to Ge segregation. It is also important to note that, with poly-Si0.8Ge0.2 gate and Ni salicide process, the current drivability of pMOSFETs is significantly improved due to less gate poly depletion and lower source-to-drain resistance(Rsd). Conclusively, Ni salicide is the exclusive process for successful germanosilicide formation on poly-Si0.8Ge0.2 gate without poly-Si buffer layer and Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate can increase Idsat of pMOSFETs by 20% as compared to conventional CoSi2/poly-Si gate structure.

AB - For the first time, Ni salicide process is applied directly on poly-Si0.8Ge0.2 gate, and pMOSFETs utilizing Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate are fully characterized. The excellent value (approximately 5 Ω/□) of sheet resistance is achieved from 0.15 μm Ni(SixGe1-x)/Si0.8Ge0.2 gate, while Co salicide process applied on Si0.8Ge0.2 gate results in Rs fail due to Ge segregation. It is also important to note that, with poly-Si0.8Ge0.2 gate and Ni salicide process, the current drivability of pMOSFETs is significantly improved due to less gate poly depletion and lower source-to-drain resistance(Rsd). Conclusively, Ni salicide is the exclusive process for successful germanosilicide formation on poly-Si0.8Ge0.2 gate without poly-Si buffer layer and Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate can increase Idsat of pMOSFETs by 20% as compared to conventional CoSi2/poly-Si gate structure.

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M3 - Conference article

AN - SCOPUS:0033698754

SN - 0743-1562

SP - 114

EP - 115

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - 2000 Symposium on VLSI Technology

Y2 - 13 June 2000 through 15 June 2000

ER -

High performance pMOSFETs with Ni(Si_xGe_1-x)/poly-Si_0.8Ge_0.2 gate

Abstract

All Science Journal Classification (ASJC) codes

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