High performance poly-Si TFT (μ>290cm2/Vsec) direct fabricated on plastic substrate below 170°C

Jang-Yeon Kwon, Do Young Kim, Ji Sim Jung, Jong Man Kim, Hyuck Lim, Kyung Bae Park, Hans S. Cho, Xiaoxin Zhang, Huaxiang Yin, Wenxu Xianyu, Takashi Noguchi

Research output: Contribution to journalConference article

Abstract

We present the characterization of poly-Si TFT fabricated below 170°C on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than 290 cm 2/Vsec.

Original languageEnglish
Pages (from-to)149-152
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume1
Publication statusPublished - 2006 Dec 1
Event5th International Meeting on Information Display - Seoul, Korea, Republic of
Duration: 2005 Jul 192005 Jul 23

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Plasma CVD
Inductively coupled plasma
Excimer lasers
Polysilicon
Crystallization
Plastics
Electrons
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kwon, Jang-Yeon ; Kim, Do Young ; Jung, Ji Sim ; Kim, Jong Man ; Lim, Hyuck ; Park, Kyung Bae ; Cho, Hans S. ; Zhang, Xiaoxin ; Yin, Huaxiang ; Xianyu, Wenxu ; Noguchi, Takashi. / High performance poly-Si TFT (μ>290cm2/Vsec) direct fabricated on plastic substrate below 170°C. In: Proceedings of International Meeting on Information Display. 2006 ; Vol. 1. pp. 149-152.
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abstract = "We present the characterization of poly-Si TFT fabricated below 170°C on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than 290 cm 2/Vsec.",
author = "Jang-Yeon Kwon and Kim, {Do Young} and Jung, {Ji Sim} and Kim, {Jong Man} and Hyuck Lim and Park, {Kyung Bae} and Cho, {Hans S.} and Xiaoxin Zhang and Huaxiang Yin and Wenxu Xianyu and Takashi Noguchi",
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Kwon, J-Y, Kim, DY, Jung, JS, Kim, JM, Lim, H, Park, KB, Cho, HS, Zhang, X, Yin, H, Xianyu, W & Noguchi, T 2006, 'High performance poly-Si TFT (μ>290cm2/Vsec) direct fabricated on plastic substrate below 170°C', Proceedings of International Meeting on Information Display, vol. 1, pp. 149-152.

High performance poly-Si TFT (μ>290cm2/Vsec) direct fabricated on plastic substrate below 170°C. / Kwon, Jang-Yeon; Kim, Do Young; Jung, Ji Sim; Kim, Jong Man; Lim, Hyuck; Park, Kyung Bae; Cho, Hans S.; Zhang, Xiaoxin; Yin, Huaxiang; Xianyu, Wenxu; Noguchi, Takashi.

In: Proceedings of International Meeting on Information Display, Vol. 1, 01.12.2006, p. 149-152.

Research output: Contribution to journalConference article

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T1 - High performance poly-Si TFT (μ>290cm2/Vsec) direct fabricated on plastic substrate below 170°C

AU - Kwon, Jang-Yeon

AU - Kim, Do Young

AU - Jung, Ji Sim

AU - Kim, Jong Man

AU - Lim, Hyuck

AU - Park, Kyung Bae

AU - Cho, Hans S.

AU - Zhang, Xiaoxin

AU - Yin, Huaxiang

AU - Xianyu, Wenxu

AU - Noguchi, Takashi

PY - 2006/12/1

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N2 - We present the characterization of poly-Si TFT fabricated below 170°C on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than 290 cm 2/Vsec.

AB - We present the characterization of poly-Si TFT fabricated below 170°C on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than 290 cm 2/Vsec.

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