We present the characterization of poly-Si TFT fabricated below 170°C on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than 290 cm 2/Vsec.
|Number of pages||4|
|Journal||Proceedings of International Meeting on Information Display|
|Publication status||Published - 2006|
|Event||5th International Meeting on Information Display - Seoul, Korea, Republic of|
Duration: 2005 Jul 19 → 2005 Jul 23
All Science Journal Classification (ASJC) codes