High performance poly-Si TFT (μ>290cm2/Vsec) direct fabricated on plastic substrate below 170°C

Jang Yoon Kwon, Do Young Kim, Ji Sim Jung, Jong Man Kim, Hyuck Lim, Kyung Bae Park, Hans S. Cho, Xiaoxin Zhang, Huaxiang Yin, Wenxu Xianyu, Takashi Noguchi

Research output: Contribution to journalConference article

Abstract

We present the characterization of poly-Si TFT fabricated below 170°C on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than 290 cm 2/Vsec.

Original languageEnglish
Pages (from-to)149-152
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume1
Publication statusPublished - 2006 Dec 1
Event5th International Meeting on Information Display - Seoul, Korea, Republic of
Duration: 2005 Jul 192005 Jul 23

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kwon, J. Y., Kim, D. Y., Jung, J. S., Kim, J. M., Lim, H., Park, K. B., Cho, H. S., Zhang, X., Yin, H., Xianyu, W., & Noguchi, T. (2006). High performance poly-Si TFT (μ>290cm2/Vsec) direct fabricated on plastic substrate below 170°C. Proceedings of International Meeting on Information Display, 1, 149-152.