High performance poly-Si TFT (μ>290cm2/Vsec) direct fabricated on plastic substrate below 170°C

Jang Yoon Kwon; Do Young Kim; Ji Sim Jung; Jong Man Kim; Hyuck Lim; Kyung Bae Park; Hans S. Cho; Xiaoxin Zhang; Huaxiang Yin; Wenxu Xianyu; Takashi Noguchi

High performance poly-Si TFT (μ>290cm²/Vsec) direct fabricated on plastic substrate below 170°C

Jang Yoon Kwon, Do Young Kim, Ji Sim Jung, Jong Man Kim, Hyuck Lim, Kyung Bae Park, Hans S. Cho, Xiaoxin Zhang, Huaxiang Yin, Wenxu Xianyu, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present the characterization of poly-Si TFT fabricated below 170°C on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than 290 cm ²/Vsec.

Original language	English
Pages (from-to)	149-152
Number of pages	4
Journal	Proceedings of International Meeting on Information Display
Volume	1
Publication status	Published - 2006
Event	5th International Meeting on Information Display - Seoul, Korea, Republic of Duration: 2005 Jul 19 → 2005 Jul 23

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

@article{d3f25c35a2d9433e83b1daef5db7fbd9,

title = "High performance poly-Si TFT (μ>290cm2/Vsec) direct fabricated on plastic substrate below 170°C",

abstract = "We present the characterization of poly-Si TFT fabricated below 170°C on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than 290 cm 2/Vsec.",

author = "Kwon, {Jang Yoon} and Kim, {Do Young} and Jung, {Ji Sim} and Kim, {Jong Man} and Hyuck Lim and Park, {Kyung Bae} and Cho, {Hans S.} and Xiaoxin Zhang and Huaxiang Yin and Wenxu Xianyu and Takashi Noguchi",

year = "2006",

language = "English",

volume = "1",

pages = "149--152",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "5th International Meeting on Information Display ; Conference date: 19-07-2005 Through 23-07-2005",

}

TY - JOUR

T1 - High performance poly-Si TFT (μ>290cm2/Vsec) direct fabricated on plastic substrate below 170°C

AU - Kwon, Jang Yoon

AU - Kim, Do Young

AU - Jung, Ji Sim

AU - Kim, Jong Man

AU - Lim, Hyuck

AU - Park, Kyung Bae

AU - Cho, Hans S.

AU - Zhang, Xiaoxin

AU - Yin, Huaxiang

AU - Xianyu, Wenxu

AU - Noguchi, Takashi

PY - 2006

Y1 - 2006

N2 - We present the characterization of poly-Si TFT fabricated below 170°C on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than 290 cm 2/Vsec.

AB - We present the characterization of poly-Si TFT fabricated below 170°C on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than 290 cm 2/Vsec.

UR - http://www.scopus.com/inward/record.url?scp=33847417676&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847417676&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33847417676

SN - 1738-7558

VL - 1

SP - 149

EP - 152

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - 5th International Meeting on Information Display

Y2 - 19 July 2005 through 23 July 2005

ER -

High performance poly-Si TFT (μ>290cm²/Vsec) direct fabricated on plastic substrate below 170°C

Abstract

All Science Journal Classification (ASJC) codes

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