We present the characteristics of poly-Si TFT (Thin Film transistor) fabricated below. The field-effect mobility and sub-threshold swing of poly Si TFT were 258cm2/Vsec and 0.IV/dec respectively. For active layer, a-Si film deposited by Xe sputter was crystallized by ELA and SiO2 film as gate oxide was formed by ICP CVD below 170oC.
|Number of pages||3|
|Publication status||Published - 2005|
|Event||Second Americas Display Engineering and Applications Conference, ADEAC 2005 - Portland, OR, United States|
Duration: 2005 Oct 25 → 2005 Oct 27
|Other||Second Americas Display Engineering and Applications Conference, ADEAC 2005|
|Period||05/10/25 → 05/10/27|
All Science Journal Classification (ASJC) codes