High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic below 170°C

Ji Sim Jung, Do Young Kim, Jong Man Kim, Jang Yeon Kwon, Hyuck Lim, Hans S. Cho, Kyung Bae Park, Hyuck Lim, Takashi Noguchi

Research output: Contribution to conferencePaper

Abstract

We present the characteristics of poly-Si TFT (Thin Film transistor) fabricated below. The field-effect mobility and sub-threshold swing of poly Si TFT were 258cm2/Vsec and 0.IV/dec respectively. For active layer, a-Si film deposited by Xe sputter was crystallized by ELA and SiO2 film as gate oxide was formed by ICP CVD below 170oC.

Original languageEnglish
Pages438-440
Number of pages3
Publication statusPublished - 2005 Dec 1
EventSecond Americas Display Engineering and Applications Conference, ADEAC 2005 - Portland, OR, United States
Duration: 2005 Oct 252005 Oct 27

Other

OtherSecond Americas Display Engineering and Applications Conference, ADEAC 2005
CountryUnited States
CityPortland, OR
Period05/10/2505/10/27

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Thin film transistors
Polysilicon
Plastics
Chemical vapor deposition
Oxides

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Jung, J. S., Kim, D. Y., Kim, J. M., Kwon, J. Y., Lim, H., Cho, H. S., ... Noguchi, T. (2005). High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic below 170°C. 438-440. Paper presented at Second Americas Display Engineering and Applications Conference, ADEAC 2005, Portland, OR, United States.
Jung, Ji Sim ; Kim, Do Young ; Kim, Jong Man ; Kwon, Jang Yeon ; Lim, Hyuck ; Cho, Hans S. ; Park, Kyung Bae ; Lim, Hyuck ; Noguchi, Takashi. / High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic below 170°C. Paper presented at Second Americas Display Engineering and Applications Conference, ADEAC 2005, Portland, OR, United States.3 p.
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abstract = "We present the characteristics of poly-Si TFT (Thin Film transistor) fabricated below. The field-effect mobility and sub-threshold swing of poly Si TFT were 258cm2/Vsec and 0.IV/dec respectively. For active layer, a-Si film deposited by Xe sputter was crystallized by ELA and SiO2 film as gate oxide was formed by ICP CVD below 170oC.",
author = "Jung, {Ji Sim} and Kim, {Do Young} and Kim, {Jong Man} and Kwon, {Jang Yeon} and Hyuck Lim and Cho, {Hans S.} and Park, {Kyung Bae} and Hyuck Lim and Takashi Noguchi",
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Jung, JS, Kim, DY, Kim, JM, Kwon, JY, Lim, H, Cho, HS, Park, KB, Lim, H & Noguchi, T 2005, 'High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic below 170°C', Paper presented at Second Americas Display Engineering and Applications Conference, ADEAC 2005, Portland, OR, United States, 05/10/25 - 05/10/27 pp. 438-440.

High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic below 170°C. / Jung, Ji Sim; Kim, Do Young; Kim, Jong Man; Kwon, Jang Yeon; Lim, Hyuck; Cho, Hans S.; Park, Kyung Bae; Lim, Hyuck; Noguchi, Takashi.

2005. 438-440 Paper presented at Second Americas Display Engineering and Applications Conference, ADEAC 2005, Portland, OR, United States.

Research output: Contribution to conferencePaper

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T1 - High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic below 170°C

AU - Jung, Ji Sim

AU - Kim, Do Young

AU - Kim, Jong Man

AU - Kwon, Jang Yeon

AU - Lim, Hyuck

AU - Cho, Hans S.

AU - Park, Kyung Bae

AU - Lim, Hyuck

AU - Noguchi, Takashi

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N2 - We present the characteristics of poly-Si TFT (Thin Film transistor) fabricated below. The field-effect mobility and sub-threshold swing of poly Si TFT were 258cm2/Vsec and 0.IV/dec respectively. For active layer, a-Si film deposited by Xe sputter was crystallized by ELA and SiO2 film as gate oxide was formed by ICP CVD below 170oC.

AB - We present the characteristics of poly-Si TFT (Thin Film transistor) fabricated below. The field-effect mobility and sub-threshold swing of poly Si TFT were 258cm2/Vsec and 0.IV/dec respectively. For active layer, a-Si film deposited by Xe sputter was crystallized by ELA and SiO2 film as gate oxide was formed by ICP CVD below 170oC.

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Jung JS, Kim DY, Kim JM, Kwon JY, Lim H, Cho HS et al. High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic below 170°C. 2005. Paper presented at Second Americas Display Engineering and Applications Conference, ADEAC 2005, Portland, OR, United States.