High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic below 170°C

Ji Sim Jung, Do Young Kim, Jong Man Kim, Jang Yeon Kwon, Hyuck Lim, Hans S. Cho, Kyung Bae Park, Hyuck Lim, Takashi Noguchi

Research output: Contribution to conferencePaper

Abstract

We present the characteristics of poly-Si TFT (Thin Film transistor) fabricated below. The field-effect mobility and sub-threshold swing of poly Si TFT were 258cm2/Vsec and 0.IV/dec respectively. For active layer, a-Si film deposited by Xe sputter was crystallized by ELA and SiO2 film as gate oxide was formed by ICP CVD below 170oC.

Original languageEnglish
Pages438-440
Number of pages3
Publication statusPublished - 2005
EventSecond Americas Display Engineering and Applications Conference, ADEAC 2005 - Portland, OR, United States
Duration: 2005 Oct 252005 Oct 27

Other

OtherSecond Americas Display Engineering and Applications Conference, ADEAC 2005
CountryUnited States
CityPortland, OR
Period05/10/2505/10/27

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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