We present the characteristics of poly-Si TFT (Thin Film transistor) fabricated below. The field-effect mobility and subthreshold swing of poly Si TFT were 258cm2/Vsec and 0.1V/dec respectively. For active layer, a-Si film deposited by Xe sputter was crystallized by ELA and SiO2 film as gate oxide was formed by ICP CVD below 170°C.
|Number of pages||3|
|Journal||SID Conference Record of the International Display Research Conference|
|Publication status||Published - 2005 Dec 1|
|Event||25th Internatioanl Display Research Conference, EURODISPLAY 2005 - Edinburgh, SCO, United Kingdom|
Duration: 2005 Sep 20 → 2005 Sep 22
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering