High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic substrates below 170°C

Ji Sim Jung, Do Young Kim, Jong Man Kim, Jang Yeon Kwon, Hyuck Lim, Hans S. Cho, Kyung Bae Park, Takashi Noguchi

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


We present the characteristics of poly-Si TFT (Thin Film transistor) fabricated below. The field-effect mobility and subthreshold swing of poly Si TFT were 258cm2/Vsec and 0.1V/dec respectively. For active layer, a-Si film deposited by Xe sputter was crystallized by ELA and SiO2 film as gate oxide was formed by ICP CVD below 170°C.

Original languageEnglish
Pages (from-to)438-440
Number of pages3
JournalSID Conference Record of the International Display Research Conference
Publication statusPublished - 2005
Event25th Internatioanl Display Research Conference, EURODISPLAY 2005 - Edinburgh, SCO, United Kingdom
Duration: 2005 Sep 202005 Sep 22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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