High performance self-aligned top-gate amorphous indium zinc oxide thin-film transistors

Jae Chul Park, Chang Jung Kim, Seongil Im

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high performance simple-processed a-IZO TFT with the mobility of 116 cm2V 1s1 , SS of 190 mV dec1, and good bias stability. The mobility value is regarded to be the most superior among previously reported ones of AOS TFTs, to the best of our limited knowledge.

Original languageEnglish
Title of host publicationProceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, AM-FPD 2013
Pages247-250
Number of pages4
Publication statusPublished - 2013 Nov 22
Event20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013 - Kyoto, Japan
Duration: 2013 Jul 22013 Jul 5

Publication series

NameProceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013

Other

Other20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013
CountryJapan
CityKyoto
Period13/7/213/7/5

Fingerprint

Thin film transistors
Zinc oxide
Indium
Oxide films

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Park, J. C., Kim, C. J., & Im, S. (2013). High performance self-aligned top-gate amorphous indium zinc oxide thin-film transistors. In Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013 (pp. 247-250). [6617827] (Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013).
Park, Jae Chul ; Kim, Chang Jung ; Im, Seongil. / High performance self-aligned top-gate amorphous indium zinc oxide thin-film transistors. Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013. 2013. pp. 247-250 (Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013).
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title = "High performance self-aligned top-gate amorphous indium zinc oxide thin-film transistors",
abstract = "We clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high performance simple-processed a-IZO TFT with the mobility of 116 cm2V 1s1 , SS of 190 mV dec1, and good bias stability. The mobility value is regarded to be the most superior among previously reported ones of AOS TFTs, to the best of our limited knowledge.",
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year = "2013",
month = "11",
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language = "English",
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Park, JC, Kim, CJ & Im, S 2013, High performance self-aligned top-gate amorphous indium zinc oxide thin-film transistors. in Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013., 6617827, Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013, pp. 247-250, 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013, Kyoto, Japan, 13/7/2.

High performance self-aligned top-gate amorphous indium zinc oxide thin-film transistors. / Park, Jae Chul; Kim, Chang Jung; Im, Seongil.

Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013. 2013. p. 247-250 6617827 (Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - We clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high performance simple-processed a-IZO TFT with the mobility of 116 cm2V 1s1 , SS of 190 mV dec1, and good bias stability. The mobility value is regarded to be the most superior among previously reported ones of AOS TFTs, to the best of our limited knowledge.

AB - We clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high performance simple-processed a-IZO TFT with the mobility of 116 cm2V 1s1 , SS of 190 mV dec1, and good bias stability. The mobility value is regarded to be the most superior among previously reported ones of AOS TFTs, to the best of our limited knowledge.

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Park JC, Kim CJ, Im S. High performance self-aligned top-gate amorphous indium zinc oxide thin-film transistors. In Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013. 2013. p. 247-250. 6617827. (Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013).