High performance solution-processed IGZO TFTs formed by using a high-pressure annealing method

You Seung Rim, Dong Lim Kim, Woong Hee Jeong, Hyun Soo Shin, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed a noble high-pressure annealing (HPA) method for solution-processed indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). As the pressure increased, the electrical properties of solution-processed IGZO TFTs were improved. This could be attributed to the decomposition promotion of metal-organic bonding and the density decrease of interface defect states between IGZO channel and SiO 2 gate insulator. For the IGZO channel layer annealed for 3 h at 1 MPa and 300°C, its channel mobility (μ FE), threshold voltage (V th), subthreshold gate swing (S.S) and on/off ratio were 1.02 cm 2/Vs, 2.47 V, 0.48 V/dec. and 7.5×10 6, respectively.

Original languageEnglish
Title of host publication49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Pages1148-1150
Number of pages3
Publication statusPublished - 2011 Dec 1
Event49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, United States
Duration: 2011 May 152011 May 20

Publication series

Name49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Volume3

Other

Other49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
CountryUnited States
CityLos Angeles, CA
Period11/5/1511/5/20

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All Science Journal Classification (ASJC) codes

  • Hardware and Architecture

Cite this

Rim, Y. S., Kim, D. L., Jeong, W. H., Shin, H. S., & Kim, H. J. (2011). High performance solution-processed IGZO TFTs formed by using a high-pressure annealing method. In 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 (pp. 1148-1150). (49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011; Vol. 3).