TY - GEN
T1 - High performance solution-processed IGZO TFTs formed by using a high-pressure annealing method
AU - Rim, You Seung
AU - Kim, Dong Lim
AU - Jeong, Woong Hee
AU - Shin, Hyun Soo
AU - Kim, Hyun Jae
PY - 2011
Y1 - 2011
N2 - We have developed a noble high-pressure annealing (HPA) method for solution-processed indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). As the pressure increased, the electrical properties of solution-processed IGZO TFTs were improved. This could be attributed to the decomposition promotion of metal-organic bonding and the density decrease of interface defect states between IGZO channel and SiO 2 gate insulator. For the IGZO channel layer annealed for 3 h at 1 MPa and 300°C, its channel mobility (μ FE), threshold voltage (V th), subthreshold gate swing (S.S) and on/off ratio were 1.02 cm 2/Vs, 2.47 V, 0.48 V/dec. and 7.5×10 6, respectively.
AB - We have developed a noble high-pressure annealing (HPA) method for solution-processed indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). As the pressure increased, the electrical properties of solution-processed IGZO TFTs were improved. This could be attributed to the decomposition promotion of metal-organic bonding and the density decrease of interface defect states between IGZO channel and SiO 2 gate insulator. For the IGZO channel layer annealed for 3 h at 1 MPa and 300°C, its channel mobility (μ FE), threshold voltage (V th), subthreshold gate swing (S.S) and on/off ratio were 1.02 cm 2/Vs, 2.47 V, 0.48 V/dec. and 7.5×10 6, respectively.
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M3 - Conference contribution
AN - SCOPUS:84860876244
SN - 9781618390967
T3 - 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
SP - 1148
EP - 1150
BT - 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
T2 - 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Y2 - 15 May 2011 through 20 May 2011
ER -