Resistive random access memories can potentially open a niche area in memory technology applications by combining the advantages of the long endurance of dynamic random-access memory and the long retention time of flash memories. Recently, resistive memory devices based on organo-metal halide perovskite materials have demonstrated outstanding memory properties, such as a low-voltage operation and a high ON/OFF ratio; such properties are essential requirements for low power consumption in developing practical memory devices. In this study, a nonhalide lead source is employed to deposit perovskite films via a simple single-step spin-coating method for fabricating unipolar resistive memory devices in a cross-bar array architecture. These unipolar perovskite memory devices achieve a high ON/OFF ratio up to 108 with a relatively low operation voltage, a large endurance, and long retention times. The high-yield device fabrication based on the solution-process demonstrated here will be a step toward achieving low-cost and high-density practical perovskite memory devices.
Bibliographical noteFunding Information:
K.K. and H.A. contributed equally to this work. The authors appreciate the financial support of the National Creative Research Laboratory program (Grant No. 2012026372) through the National Research Foundation of Korea (NRF) funded by the Korean Ministry of Science and ICT and the industry-university cooperation program by the Samsung Electronics Co., Ltd. K.K. appreciates the financial support by Postdoctoral Science Fellowship from POSCO TJ Park Foundation.
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering