@inproceedings{1352eea91ff74f9f8e5f0a9b26054b92,
title = "High-performance solution-processed oxide TFT with dual channel at low temperature",
abstract = "In this study, we investigated solution-processed oxide thin film transistors (TFTs) with dual channel (DC) at 350°C. The DC TFTs consisted of thin InZnO (IZO) channel and thick AlInZnO (AIZO) channel. The IZO could provide high carrier concentration to enhance the charge transport for high saturation mobility (μ sat) and thick AIZO channel could also regulate the conductance for proper threshold voltage (V th). The resistivity of front IZO thin films could be determined by composition ratio of In/Zn and thickness of IZO channel. Thus, we can demonstrate excellent device with μ sat of 5.02 cm 2/Vs, V th of 0.35 V, and on/off ratio of over 10 6 at 350°C.",
author = "Jeong, {Woong Hee} and Kim, {Kyung Min} and Kim, {Dong Lim} and Rim, {You Seung} and Kim, {Hyun Jae} and Park, {Kyung Bae} and Ryu, {Myung Kwan}",
year = "2011",
language = "English",
isbn = "9781618390967",
series = "49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011",
pages = "476--478",
booktitle = "49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011",
note = "49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 ; Conference date: 15-05-2011 Through 20-05-2011",
}