High-performance solution-processed oxide TFT with dual channel at low temperature

Woong Hee Jeong, Kyung Min Kim, Dong Lim Kim, You Seung Rim, Hyun Jae Kim, Kyung Bae Park, Myung Kwan Ryu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this study, we investigated solution-processed oxide thin film transistors (TFTs) with dual channel (DC) at 350°C. The DC TFTs consisted of thin InZnO (IZO) channel and thick AlInZnO (AIZO) channel. The IZO could provide high carrier concentration to enhance the charge transport for high saturation mobility (μ sat) and thick AIZO channel could also regulate the conductance for proper threshold voltage (V th). The resistivity of front IZO thin films could be determined by composition ratio of In/Zn and thickness of IZO channel. Thus, we can demonstrate excellent device with μ sat of 5.02 cm 2/Vs, V th of 0.35 V, and on/off ratio of over 10 6 at 350°C.

Original languageEnglish
Title of host publication49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Pages476-478
Number of pages3
Publication statusPublished - 2011
Event49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, United States
Duration: 2011 May 15 → 2011 May 20

Publication series

Name49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Volume1

Other

Other49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
CountryUnited States
CityLos Angeles, CA
Period11/5/15 → 11/5/20

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture

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