Abstract
In this study, we investigated solution-processed oxide thin film transistors (TFTs) with dual channel (DC) at 350°C. The DC TFTs consisted of thin InZnO (IZO) channel and thick AlInZnO (AIZO) channel. The IZO could provide high carrier concentration to enhance the charge transport for high saturation mobility (μ sat) and thick AIZO channel could also regulate the conductance for proper threshold voltage (V th). The resistivity of front IZO thin films could be determined by composition ratio of In/Zn and thickness of IZO channel. Thus, we can demonstrate excellent device with μ sat of 5.02 cm 2/Vs, V th of 0.35 V, and on/off ratio of over 10 6 at 350°C.
| Original language | English |
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| Title of host publication | 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 |
| Pages | 476-478 |
| Number of pages | 3 |
| Publication status | Published - 2011 Dec 1 |
| Event | 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, United States Duration: 2011 May 15 → 2011 May 20 |
Publication series
| Name | 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 |
|---|---|
| Volume | 1 |
Other
| Other | 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 |
|---|---|
| Country | United States |
| City | Los Angeles, CA |
| Period | 11/5/15 → 11/5/20 |
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All Science Journal Classification (ASJC) codes
- Hardware and Architecture
Cite this
Jeong, W. H., Kim, K. M., Kim, D. L., Rim, Y. S., Kim, H. J., Park, K. B., & Ryu, M. K. (2011). High-performance solution-processed oxide TFT with dual channel at low temperature. In 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 (pp. 476-478). (49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011; Vol. 1).