High-performance stable n-type indenofluorenedione field-effect transistors

Young Il Park, Joong Suk Lee, Beom Joon Kim, Beomjin Kim, Jaehyun Lee, Do Hwan Kim, Se Young Oh, Jeong Ho Cho, Jong Wook Park

Research output: Contribution to journalArticle

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Abstract

We developed high-performance stable n-type organic field-effect transistors (OFETs) using indenofluorenediones with different numbers of fluorine substituents (MonoF-IF-dione, DiF-IF-dione, and TriF-IF-dione). Top-contact OFETs were fabricated via the vacuum deposition of indenofluorenediones as the semiconducting channel material on polystyrene-treated SiO2/Si substrates. TriF-IF-dione FETs with Au source/drain contacts exhibited good device performances, with a field-effect mobility of 0.16 cm2/(V s), an on/off current ratio of 10 6, and a threshold voltage of 9.2 V. We found that the electrical stability for OFETs based on indenofluorenedione improved with the number of fluorine substituents, which was attributed to higher activation energies for charge trap creation. Moreover, the TriF-IF-dione FETs yielded excellent environmental stability properties, because the LUMO energy levels were relatively low, compared with those of the MonoF-IF-dione FETs.

Original languageEnglish
Pages (from-to)4038-4044
Number of pages7
JournalChemistry of Materials
Volume23
Issue number17
DOIs
Publication statusPublished - 2011 Sep 13

Fingerprint

Organic field effect transistors
Field effect transistors
Fluorine
Vacuum deposition
Polystyrenes
Threshold voltage
Electron energy levels
Activation energy
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Park, Y. I., Lee, J. S., Kim, B. J., Kim, B., Lee, J., Kim, D. H., ... Park, J. W. (2011). High-performance stable n-type indenofluorenedione field-effect transistors. Chemistry of Materials, 23(17), 4038-4044. https://doi.org/10.1021/cm2016824
Park, Young Il ; Lee, Joong Suk ; Kim, Beom Joon ; Kim, Beomjin ; Lee, Jaehyun ; Kim, Do Hwan ; Oh, Se Young ; Cho, Jeong Ho ; Park, Jong Wook. / High-performance stable n-type indenofluorenedione field-effect transistors. In: Chemistry of Materials. 2011 ; Vol. 23, No. 17. pp. 4038-4044.
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Park, YI, Lee, JS, Kim, BJ, Kim, B, Lee, J, Kim, DH, Oh, SY, Cho, JH & Park, JW 2011, 'High-performance stable n-type indenofluorenedione field-effect transistors', Chemistry of Materials, vol. 23, no. 17, pp. 4038-4044. https://doi.org/10.1021/cm2016824

High-performance stable n-type indenofluorenedione field-effect transistors. / Park, Young Il; Lee, Joong Suk; Kim, Beom Joon; Kim, Beomjin; Lee, Jaehyun; Kim, Do Hwan; Oh, Se Young; Cho, Jeong Ho; Park, Jong Wook.

In: Chemistry of Materials, Vol. 23, No. 17, 13.09.2011, p. 4038-4044.

Research output: Contribution to journalArticle

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AU - Kim, Do Hwan

AU - Oh, Se Young

AU - Cho, Jeong Ho

AU - Park, Jong Wook

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Park YI, Lee JS, Kim BJ, Kim B, Lee J, Kim DH et al. High-performance stable n-type indenofluorenedione field-effect transistors. Chemistry of Materials. 2011 Sep 13;23(17):4038-4044. https://doi.org/10.1021/cm2016824