High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO

S. J. Lim; Soon Ju Kwon; Hyungjun Kim; Jin Seong Park

doi:10.1063/1.2803219

High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO

S. J. Lim, Soon Ju Kwon, Hyungjun Kim, Jin Seong Park

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

178 Citations (Scopus)

Abstract

High performance thin film transistor (TFT) with atomic layer deposition (ALD) nitrogen doped ZnO (ZnO:N) as an active layer is demonstrated. The electrical properties of ZnO thin films were effectively controlled by in situ nitrogen doping using N H4 OH as a source for reactants. Especially, the electron concentration in ZnO was lowered to below 1015 cm-3. Good device characteristics were obtained from the inverted staggered type TFTs with ZnO:N channel and ALD Al2 O3 gate insulator; μsat =6.7 cm2 V s, Ioff =2.03× 10-12 A, Ionoff =9.46× 107, and subthreshold swing=0.67 Vdecade. The entire TFT fabrication processes were carried out at below 150 °C, which is a favorable process for plastic based flexible display.

Original language	English
Article number	183517
Journal	Applied Physics Letters
Volume	91
Issue number	18
DOIs	https://doi.org/10.1063/1.2803219
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was supported by POSTECH Core Research Program, Korean Research Foundation Grant funded by the Korean Government (MOEHRD) (Grant No. KRF-2005-005-J13102), and Samsung SDI.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2803219

Cite this

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title = "High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO",

abstract = "High performance thin film transistor (TFT) with atomic layer deposition (ALD) nitrogen doped ZnO (ZnO:N) as an active layer is demonstrated. The electrical properties of ZnO thin films were effectively controlled by in situ nitrogen doping using N H4 OH as a source for reactants. Especially, the electron concentration in ZnO was lowered to below 1015 cm-3. Good device characteristics were obtained from the inverted staggered type TFTs with ZnO:N channel and ALD Al2 O3 gate insulator; μsat =6.7 cm2 V s, Ioff =2.03× 10-12 A, Ionoff =9.46× 107, and subthreshold swing=0.67 Vdecade. The entire TFT fabrication processes were carried out at below 150 °C, which is a favorable process for plastic based flexible display.",

author = "Lim, {S. J.} and Kwon, {Soon Ju} and Hyungjun Kim and Park, {Jin Seong}",

note = "Funding Information: This work was supported by POSTECH Core Research Program, Korean Research Foundation Grant funded by the Korean Government (MOEHRD) (Grant No. KRF-2005-005-J13102), and Samsung SDI.",

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doi = "10.1063/1.2803219",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO

AU - Lim, S. J.

AU - Kwon, Soon Ju

AU - Kim, Hyungjun

AU - Park, Jin Seong

N1 - Funding Information: This work was supported by POSTECH Core Research Program, Korean Research Foundation Grant funded by the Korean Government (MOEHRD) (Grant No. KRF-2005-005-J13102), and Samsung SDI.

PY - 2007

Y1 - 2007

N2 - High performance thin film transistor (TFT) with atomic layer deposition (ALD) nitrogen doped ZnO (ZnO:N) as an active layer is demonstrated. The electrical properties of ZnO thin films were effectively controlled by in situ nitrogen doping using N H4 OH as a source for reactants. Especially, the electron concentration in ZnO was lowered to below 1015 cm-3. Good device characteristics were obtained from the inverted staggered type TFTs with ZnO:N channel and ALD Al2 O3 gate insulator; μsat =6.7 cm2 V s, Ioff =2.03× 10-12 A, Ionoff =9.46× 107, and subthreshold swing=0.67 Vdecade. The entire TFT fabrication processes were carried out at below 150 °C, which is a favorable process for plastic based flexible display.

AB - High performance thin film transistor (TFT) with atomic layer deposition (ALD) nitrogen doped ZnO (ZnO:N) as an active layer is demonstrated. The electrical properties of ZnO thin films were effectively controlled by in situ nitrogen doping using N H4 OH as a source for reactants. Especially, the electron concentration in ZnO was lowered to below 1015 cm-3. Good device characteristics were obtained from the inverted staggered type TFTs with ZnO:N channel and ALD Al2 O3 gate insulator; μsat =6.7 cm2 V s, Ioff =2.03× 10-12 A, Ionoff =9.46× 107, and subthreshold swing=0.67 Vdecade. The entire TFT fabrication processes were carried out at below 150 °C, which is a favorable process for plastic based flexible display.

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High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO

Abstract

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