High-performance vacuum-processed metal oxide thin-film transistors: A review of recent developments

Hee Jun Kim, Kyungho Park, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


Since 2010, vacuum-processed oxide semiconductors have greatly improved with the publication of more than 1,300 related papers. Although the number of researches on oxide semiconductors has continued to increase year by year, the average field-effect mobility of oxide semiconductor thin-film transistors (TFTs) has not shown significant improvement; from 2010 to 2018; the average field-effect mobility of vacuum-processed n-type oxide TFTs is around 20 cm2/Vs. To investigate the obstacles for performance improvements, the latest progress and researches on vacuum-processed oxide semiconductor TFTs for high performance over the past decade are highlighted, along with the pros and cons of each technology. Finally, complementary metal oxide semiconductor (CMOS) logic circuits composed of both n- and p-type oxide semiconductor TFTs are introduced, and future prospects for this state-of-the-art research on the oxide semiconductors are presented.

Original languageEnglish
Pages (from-to)591-622
Number of pages32
JournalJournal of the Society for Information Display
Issue number7
Publication statusPublished - 2020 Jul 1

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No. 2017R1A2B3008719).

Publisher Copyright:
© 2020 Society for Information Display.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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