High-performance ZnO thin-film transistor fabricated by atomic layer deposition

Byeong Yun Oh, Young Hwan Kim, Hee Jun Lee, Byoung Yong Kim, Hong Gyu Park, Jin Woo Han, Gi Seok Heo, Tae Won Kim, Kwang Young Kim, Dae Shik Seo

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Abstract

We report the fabrication and characteristics of a ZnO thin-film transistor (TFT) using a 50 nm thick ZnO film as an active layer on an Al 2O3 gate dielectric film deposited by atomic layer deposition. Lowering the deposition temperature allowed the control of the carrier concentration of the active channel layer (ZnO film) in the TFT device. The ZnO TFT fabricated at 110 °C exhibited high-performance TFT characteristics including a saturation field-effect mobility of 11.86 cm 2 V-1 s-1, an on-to-off current ratio of 3.09 × 107 and a sub-threshold gate-voltage swing of 0.72 V decade-1.

Original languageEnglish
Article number085007
JournalSemiconductor Science and Technology
Volume26
Issue number8
DOIs
Publication statusPublished - 2011 Aug 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Oh, B. Y., Kim, Y. H., Lee, H. J., Kim, B. Y., Park, H. G., Han, J. W., Heo, G. S., Kim, T. W., Kim, K. Y., & Seo, D. S. (2011). High-performance ZnO thin-film transistor fabricated by atomic layer deposition. Semiconductor Science and Technology, 26(8), [085007]. https://doi.org/10.1088/0268-1242/26/8/085007