High potential barrier effects on self-assembled InAs quantum dots

S. I. Jung, H. Y. Yeo, I. Yun, J. Y. Leem, S. M. Cho, J. S. Kim, J. I. Lee

Research output: Contribution to journalArticle

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Abstract

The effects of an AlAs layer with different positions and thicknesses on self-assembled InAs quantum dots (QDs) have been investigated by using transmission electron microscopy and photoluminescence (PL). The emission peak position of InAs QDs directly grown on an AlAs layer is blueshifted from that of InAs QDs grown on a GaAs layer without any significant loss of the QD qualities. However, the PL peak position of InAs QDs grown under an AlAs layer does not vary. This result is related to the high potential barrier, the reduced dot size, and the interdiffusion of Al atom at the InAs QDs during growing the InAs QDs on an AlAs layer.

Original languageEnglish
Pages (from-to)767-770
Number of pages4
JournalJournal of the Korean Physical Society
Volume50
Issue number3
DOIs
Publication statusPublished - 2007 Jan 1

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quantum dots
photoluminescence
transmission electron microscopy
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Jung, S. I., Yeo, H. Y., Yun, I., Leem, J. Y., Cho, S. M., Kim, J. S., & Lee, J. I. (2007). High potential barrier effects on self-assembled InAs quantum dots. Journal of the Korean Physical Society, 50(3), 767-770. https://doi.org/10.3938/jkps.50.767
Jung, S. I. ; Yeo, H. Y. ; Yun, I. ; Leem, J. Y. ; Cho, S. M. ; Kim, J. S. ; Lee, J. I. / High potential barrier effects on self-assembled InAs quantum dots. In: Journal of the Korean Physical Society. 2007 ; Vol. 50, No. 3. pp. 767-770.
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High potential barrier effects on self-assembled InAs quantum dots. / Jung, S. I.; Yeo, H. Y.; Yun, I.; Leem, J. Y.; Cho, S. M.; Kim, J. S.; Lee, J. I.

In: Journal of the Korean Physical Society, Vol. 50, No. 3, 01.01.2007, p. 767-770.

Research output: Contribution to journalArticle

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AU - Jung, S. I.

AU - Yeo, H. Y.

AU - Yun, I.

AU - Leem, J. Y.

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AB - The effects of an AlAs layer with different positions and thicknesses on self-assembled InAs quantum dots (QDs) have been investigated by using transmission electron microscopy and photoluminescence (PL). The emission peak position of InAs QDs directly grown on an AlAs layer is blueshifted from that of InAs QDs grown on a GaAs layer without any significant loss of the QD qualities. However, the PL peak position of InAs QDs grown under an AlAs layer does not vary. This result is related to the high potential barrier, the reduced dot size, and the interdiffusion of Al atom at the InAs QDs during growing the InAs QDs on an AlAs layer.

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