The microwave performance potential of electronic devices fabricated from GaN-based semiconductors is described. The investigation makes use of theoretical simulations and the results are compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that devices fabricated from these semiconductors make possible microwave power amplifiers with superior RF power performance, particularly at elevated temperature, compared to comparable components fabricated from GaAs MESFET's. In particular, room temperature RF output power on the order of 4-5 W mm-1 of gate periphery with power-added efficiency approaching the ideal values for class A and B operation is available. These devices are likely to find application in power amplifiers for base stations transmitters for cellular telephone systems, HDTV transmitters, power modules for phased-array radars, and other applications. The devices are particularly attractive for applications hat require high RF output power and operation at elevated temperature since cooling requirements can be minimized or eliminated.
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Acknowledgements--The financial support for M. W. Shin was provided by the RRC at Myong Ji University.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry