High-power broad-area laser diode performance improvement with a double pedestal structure

Younghyun Kim, Jung Tack Yang, Woo Young Choi

Research output: Contribution to journalArticle

Abstract

We propose a novel heat-sinking structure for a high-power broad-area laser diode. In our laser diode, the pedestal structure is introduced to both top and bottom sides of the laser diode so that the heat generated within the device can be more efficiently released. The characteristics of high-power broad-area laser diodes containing the double pedestal structure are numerically analyzed by self-consistent electro-thermal-optical simulation. It is demonstrated that our laser diode has narrower lateral far-field angle and lower active region temperature compared to previously reported high-power laser diode structures.

Original languageEnglish
Article number042004
JournalJapanese Journal of Applied Physics
Volume58
Issue number4
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Semiconductor lasers
semiconductor lasers
heat
sinking
High power lasers
high power lasers
far fields
Hot Temperature
simulation
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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High-power broad-area laser diode performance improvement with a double pedestal structure. / Kim, Younghyun; Yang, Jung Tack; Choi, Woo Young.

In: Japanese Journal of Applied Physics, Vol. 58, No. 4, 042004, 01.01.2019.

Research output: Contribution to journalArticle

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