High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100ºC

Won Gi Kim, Young Jun Tak, Byung Du Ahn, Tae Soo Jung, Kwun Bum Chung, Heon Je Kim

Research output: Contribution to journalArticle

Original languageEnglish
JournalScientific Reports
Volume6
Publication statusPublished - 2016 Mar

Cite this

Kim, Won Gi ; Tak, Young Jun ; Ahn, Byung Du ; Jung, Tae Soo ; Chung, Kwun Bum ; Kim, Heon Je. / High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100ºC. In: Scientific Reports. 2016 ; Vol. 6.
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High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100ºC. / Kim, Won Gi; Tak, Young Jun; Ahn, Byung Du; Jung, Tae Soo; Chung, Kwun Bum; Kim, Heon Je.

In: Scientific Reports, Vol. 6, 03.2016.

Research output: Contribution to journalArticle

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T1 - High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100ºC

AU - Kim, Won Gi

AU - Tak, Young Jun

AU - Ahn, Byung Du

AU - Jung, Tae Soo

AU - Chung, Kwun Bum

AU - Kim, Heon Je

PY - 2016/3

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VL - 6

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

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