High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100ºC

Won Gi Kim, Young Jun Tak, Byung Du Ahn, Tae Soo Jung, Kwun Bum Chung, Heon Je Kim

Research output: Contribution to journal › Article › peer-review

Cite this

@article{ce3ba2b316494dd38bbda70988bd5918,

title = "High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100ºC",

author = "Kim, {Won Gi} and Tak, {Young Jun} and Ahn, {Byung Du} and Jung, {Tae Soo} and Chung, {Kwun Bum} and Kim, {Heon Je}",

year = "2016",

month = mar,

language = "English",

volume = "6",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

}