| Original language | English |
|---|---|
| Journal | Scientific Reports |
| Volume | 6 |
| Publication status | Published - 2016 Mar |
Cite this
Kim, W. G., Tak, Y. J., Ahn, B. D., Jung, T. S., Chung, K. B., & Kim, H. J. (2016). High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100ºC. Scientific Reports, 6.
@article{ce3ba2b316494dd38bbda70988bd5918,
title = "High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100ºC",
author = "Kim, {Won Gi} and Tak, {Young Jun} and Ahn, {Byung Du} and Jung, {Tae Soo} and Chung, {Kwun Bum} and Kim, {Heon Je}",
year = "2016",
month = "3",
language = "English",
volume = "6",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
}
Kim, WG, Tak, YJ, Ahn, BD, Jung, TS, Chung, KB & Kim, HJ 2016, 'High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100ºC', Scientific Reports, vol. 6.
High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100ºC. / Kim, Won Gi; Tak, Young Jun; Ahn, Byung Du; Jung, Tae Soo; Chung, Kwun Bum; Kim, Heon Je.
In: Scientific Reports, Vol. 6, 03.2016.Research output: Contribution to journal › Article
TY - JOUR
T1 - High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100ºC
AU - Kim, Won Gi
AU - Tak, Young Jun
AU - Ahn, Byung Du
AU - Jung, Tae Soo
AU - Chung, Kwun Bum
AU - Kim, Heon Je
PY - 2016/3
Y1 - 2016/3
M3 - Article
VL - 6
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
ER -
Kim WG, Tak YJ, Ahn BD, Jung TS, Chung KB, Kim HJ. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100ºC. Scientific Reports. 2016 Mar;6.