High-pressure gas activation for amorphous indium-gallium-zinc-oxide thin-film transistors at 100 °c

Won Gi Kim, Young Jun Tak, Byung Du Ahn, Tae Soo Jung, Kwun Bum Chung, Hyun Jae Kim

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O 2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2 /V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

Original languageEnglish
Article number23039
JournalScientific reports
Volume6
DOIs
Publication statusPublished - 2016 Mar 14

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gallium oxides
zinc oxides
indium
transistors
activation
thin films
gases
annealing
pressurizing
activation energy
oxygen
energy sources
threshold voltage
metal oxides
low pressure
kinetic energy
traps
nitrogen
shift
molecules

All Science Journal Classification (ASJC) codes

  • General

Cite this

Kim, Won Gi ; Tak, Young Jun ; Du Ahn, Byung ; Jung, Tae Soo ; Chung, Kwun Bum ; Kim, Hyun Jae. / High-pressure gas activation for amorphous indium-gallium-zinc-oxide thin-film transistors at 100 °c. In: Scientific reports. 2016 ; Vol. 6.
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High-pressure gas activation for amorphous indium-gallium-zinc-oxide thin-film transistors at 100 °c. / Kim, Won Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun Bum; Kim, Hyun Jae.

In: Scientific reports, Vol. 6, 23039, 14.03.2016.

Research output: Contribution to journalArticle

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AU - Kim, Won Gi

AU - Tak, Young Jun

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AU - Chung, Kwun Bum

AU - Kim, Hyun Jae

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