High-Pressure Solvent Vapor Annealing with a Benign Solvent To Rapidly Enhance the Performance of Organic Photovoltaics

Buyoung Jung, Kangmin Kim, Yoomin Eom, Woochul Kim

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

A high-pressure solvent vapor annealing (HPSVA) treatment is suggested as an annealing process to rapidly achieve high-performance organic photovoltaics (OPVs); this process can be compatible with roll-to-roll processing methods and uses a benign solvent: acetone. Solvent vapor annealing can produce an advantageous vertical distribution in the active layer; however, conventional solvent vapor annealing is also time-consuming. To shorten the annealing time, high-pressure solvent vapor is exposed on the active layer of OPVs. Acetone is a nonsolvent for poly(3-hexylthiophene-2,5-diyl) (P3HT), but it can dissolve small amounts of 1-(3-methoxycarbonyl)-propyl-1,1-phenyl-(6,6)C61 (PCBM). Acetone vapor molecules can penetrate into the active layer under high vapor pressure conditions to alter the morphology. HPSVA induces a PCBM-rich phase near the cathode and facilitates the transport of free charge carriers to the electrode. Although P3HT is not soluble in acetone, locally rearranged P3HT crystallites are generated. The performance of OPV films was enhanced after HPSVA; the film treated at 30 kPa for 10 s showed optimum performance. Additionally, this HPSVA method could be adapted for mass production because the temporary exposure of films to high-pressure acetone vapor in ambient conditions also improved performance. (Figure Presented).

Original languageEnglish
Pages (from-to)13342-13349
Number of pages8
JournalACS Applied Materials and Interfaces
Volume7
Issue number24
DOIs
Publication statusPublished - 2015 Jun 24

Fingerprint

Vapors
Annealing
Acetone
Charge carriers
Vapor pressure
Crystallites
Cathodes
Electrodes
Molecules
Processing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

@article{176373b89d11400ea8079b1a2a517c2a,
title = "High-Pressure Solvent Vapor Annealing with a Benign Solvent To Rapidly Enhance the Performance of Organic Photovoltaics",
abstract = "A high-pressure solvent vapor annealing (HPSVA) treatment is suggested as an annealing process to rapidly achieve high-performance organic photovoltaics (OPVs); this process can be compatible with roll-to-roll processing methods and uses a benign solvent: acetone. Solvent vapor annealing can produce an advantageous vertical distribution in the active layer; however, conventional solvent vapor annealing is also time-consuming. To shorten the annealing time, high-pressure solvent vapor is exposed on the active layer of OPVs. Acetone is a nonsolvent for poly(3-hexylthiophene-2,5-diyl) (P3HT), but it can dissolve small amounts of 1-(3-methoxycarbonyl)-propyl-1,1-phenyl-(6,6)C61 (PCBM). Acetone vapor molecules can penetrate into the active layer under high vapor pressure conditions to alter the morphology. HPSVA induces a PCBM-rich phase near the cathode and facilitates the transport of free charge carriers to the electrode. Although P3HT is not soluble in acetone, locally rearranged P3HT crystallites are generated. The performance of OPV films was enhanced after HPSVA; the film treated at 30 kPa for 10 s showed optimum performance. Additionally, this HPSVA method could be adapted for mass production because the temporary exposure of films to high-pressure acetone vapor in ambient conditions also improved performance. (Figure Presented).",
author = "Buyoung Jung and Kangmin Kim and Yoomin Eom and Woochul Kim",
year = "2015",
month = "6",
day = "24",
doi = "10.1021/acsami.5b01658",
language = "English",
volume = "7",
pages = "13342--13349",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "24",

}

High-Pressure Solvent Vapor Annealing with a Benign Solvent To Rapidly Enhance the Performance of Organic Photovoltaics. / Jung, Buyoung; Kim, Kangmin; Eom, Yoomin; Kim, Woochul.

In: ACS Applied Materials and Interfaces, Vol. 7, No. 24, 24.06.2015, p. 13342-13349.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-Pressure Solvent Vapor Annealing with a Benign Solvent To Rapidly Enhance the Performance of Organic Photovoltaics

AU - Jung, Buyoung

AU - Kim, Kangmin

AU - Eom, Yoomin

AU - Kim, Woochul

PY - 2015/6/24

Y1 - 2015/6/24

N2 - A high-pressure solvent vapor annealing (HPSVA) treatment is suggested as an annealing process to rapidly achieve high-performance organic photovoltaics (OPVs); this process can be compatible with roll-to-roll processing methods and uses a benign solvent: acetone. Solvent vapor annealing can produce an advantageous vertical distribution in the active layer; however, conventional solvent vapor annealing is also time-consuming. To shorten the annealing time, high-pressure solvent vapor is exposed on the active layer of OPVs. Acetone is a nonsolvent for poly(3-hexylthiophene-2,5-diyl) (P3HT), but it can dissolve small amounts of 1-(3-methoxycarbonyl)-propyl-1,1-phenyl-(6,6)C61 (PCBM). Acetone vapor molecules can penetrate into the active layer under high vapor pressure conditions to alter the morphology. HPSVA induces a PCBM-rich phase near the cathode and facilitates the transport of free charge carriers to the electrode. Although P3HT is not soluble in acetone, locally rearranged P3HT crystallites are generated. The performance of OPV films was enhanced after HPSVA; the film treated at 30 kPa for 10 s showed optimum performance. Additionally, this HPSVA method could be adapted for mass production because the temporary exposure of films to high-pressure acetone vapor in ambient conditions also improved performance. (Figure Presented).

AB - A high-pressure solvent vapor annealing (HPSVA) treatment is suggested as an annealing process to rapidly achieve high-performance organic photovoltaics (OPVs); this process can be compatible with roll-to-roll processing methods and uses a benign solvent: acetone. Solvent vapor annealing can produce an advantageous vertical distribution in the active layer; however, conventional solvent vapor annealing is also time-consuming. To shorten the annealing time, high-pressure solvent vapor is exposed on the active layer of OPVs. Acetone is a nonsolvent for poly(3-hexylthiophene-2,5-diyl) (P3HT), but it can dissolve small amounts of 1-(3-methoxycarbonyl)-propyl-1,1-phenyl-(6,6)C61 (PCBM). Acetone vapor molecules can penetrate into the active layer under high vapor pressure conditions to alter the morphology. HPSVA induces a PCBM-rich phase near the cathode and facilitates the transport of free charge carriers to the electrode. Although P3HT is not soluble in acetone, locally rearranged P3HT crystallites are generated. The performance of OPV films was enhanced after HPSVA; the film treated at 30 kPa for 10 s showed optimum performance. Additionally, this HPSVA method could be adapted for mass production because the temporary exposure of films to high-pressure acetone vapor in ambient conditions also improved performance. (Figure Presented).

UR - http://www.scopus.com/inward/record.url?scp=84932640757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84932640757&partnerID=8YFLogxK

U2 - 10.1021/acsami.5b01658

DO - 10.1021/acsami.5b01658

M3 - Article

VL - 7

SP - 13342

EP - 13349

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 24

ER -