High-purity β-sic powder for the single-crystal growth of SiC

Eunjin Jung, Yoon Joo Lee, Soo Ryong Kim, Woo Teck Kwon, Jun Kyu Kim, Doo Jin Choi, Younghee Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

High-purity β-SiC powder suitable for growing SiC single crystals was successfully synthesized from sol-gel precursors by carbothermal reduction. This was achieved through a two or three stage process that incorporated initial gasification, followed by gas phase reaction. To minimize the high loss that is typical of this process, and caused by the rate of evaporation in being faster than the gas phase reaction speed, the chemical structure of the precursor and heat treatment process were optimized. This found that a combination of tetraethyl orthosilicate and trimethyl phenylsilicate precursors, and a two-stage heat treatment, increases the production yield from 49.0% up to 84.4%. Furthermore, the purity of the β-SiC was also increased to 99.7%, with a metallic impurity content of just 130 ppm.

Original languageEnglish
Pages (from-to)447-450
Number of pages4
JournalJournal of Ceramic Processing Research
Volume15
Issue number6
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Fingerprint Dive into the research topics of 'High-purity β-sic powder for the single-crystal growth of SiC'. Together they form a unique fingerprint.

  • Cite this

    Jung, E., Lee, Y. J., Kim, S. R., Kwon, W. T., Kim, J. K., Choi, D. J., & Kim, Y. (2014). High-purity β-sic powder for the single-crystal growth of SiC. Journal of Ceramic Processing Research, 15(6), 447-450.