ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by metalorganic atomic layer epitaxy (MOALE) using dimethylzinc (DMZn) and hydrogen selenide (H2Se) source gases with a substrate temperature of 350°C. The MOALE system is modified from atmospheric metalorganic vapor phase epitaxy (MOVPE) by rotating susceptor to allow successive exposure to streams of gases. Also long gas inlets were introduced in the pre-heating zone of the reactor for purifying the source gases. The photoluminescence spectra of the ZnSe epilayers show dominant heavy-hole and light-hole exciton emissions for thicknesses below and above a critical thickness. The epilayer thickness was examined for the different operating cycles and was found to depend only on the number of substrate rotation cycles. These results reflect that the growth of high purity ZnSe epilayers are achieved by MOALE.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1996 Feb|
Bibliographical noteFunding Information:
This work was supported in part by KOSEF through SPRC, 1995 and in part by the Basic Science Research Institute Program, Ministry of Education of Korea, 1995, Project No. 2424.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry