High purity ZnSe epilayers grown by atmospheric double zone metalorganic atomic layer epitaxy

C. D. Lee; S. I. Min; S. K. Chang

doi:10.1016/0022-0248(95)00830-6

High purity ZnSe epilayers grown by atmospheric double zone metalorganic atomic layer epitaxy

C. D. Lee, S. I. Min, S. K. Chang

Department of Physics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by metalorganic atomic layer epitaxy (MOALE) using dimethylzinc (DMZn) and hydrogen selenide (H₂Se) source gases with a substrate temperature of 350°C. The MOALE system is modified from atmospheric metalorganic vapor phase epitaxy (MOVPE) by rotating susceptor to allow successive exposure to streams of gases. Also long gas inlets were introduced in the pre-heating zone of the reactor for purifying the source gases. The photoluminescence spectra of the ZnSe epilayers show dominant heavy-hole and light-hole exciton emissions for thicknesses below and above a critical thickness. The epilayer thickness was examined for the different operating cycles and was found to depend only on the number of substrate rotation cycles. These results reflect that the growth of high purity ZnSe epilayers are achieved by MOALE.

Original language	English
Pages (from-to)	108-111
Number of pages	4
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00830-6
Publication status	Published - 1996 Feb

Bibliographical note

Funding Information:
This work was supported in part by KOSEF through SPRC, 1995 and in part by the Basic Science Research Institute Program, Ministry of Education of Korea, 1995, Project No. 2424.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(95)00830-6

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title = "High purity ZnSe epilayers grown by atmospheric double zone metalorganic atomic layer epitaxy",

abstract = "ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by metalorganic atomic layer epitaxy (MOALE) using dimethylzinc (DMZn) and hydrogen selenide (H2Se) source gases with a substrate temperature of 350°C. The MOALE system is modified from atmospheric metalorganic vapor phase epitaxy (MOVPE) by rotating susceptor to allow successive exposure to streams of gases. Also long gas inlets were introduced in the pre-heating zone of the reactor for purifying the source gases. The photoluminescence spectra of the ZnSe epilayers show dominant heavy-hole and light-hole exciton emissions for thicknesses below and above a critical thickness. The epilayer thickness was examined for the different operating cycles and was found to depend only on the number of substrate rotation cycles. These results reflect that the growth of high purity ZnSe epilayers are achieved by MOALE.",

author = "Lee, {C. D.} and Min, {S. I.} and Chang, {S. K.}",

note = "Funding Information: This work was supported in part by KOSEF through SPRC, 1995 and in part by the Basic Science Research Institute Program, Ministry of Education of Korea, 1995, Project No. 2424.",

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T1 - High purity ZnSe epilayers grown by atmospheric double zone metalorganic atomic layer epitaxy

AU - Lee, C. D.

AU - Min, S. I.

AU - Chang, S. K.

N1 - Funding Information: This work was supported in part by KOSEF through SPRC, 1995 and in part by the Basic Science Research Institute Program, Ministry of Education of Korea, 1995, Project No. 2424.

PY - 1996/2

Y1 - 1996/2

N2 - ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by metalorganic atomic layer epitaxy (MOALE) using dimethylzinc (DMZn) and hydrogen selenide (H2Se) source gases with a substrate temperature of 350°C. The MOALE system is modified from atmospheric metalorganic vapor phase epitaxy (MOVPE) by rotating susceptor to allow successive exposure to streams of gases. Also long gas inlets were introduced in the pre-heating zone of the reactor for purifying the source gases. The photoluminescence spectra of the ZnSe epilayers show dominant heavy-hole and light-hole exciton emissions for thicknesses below and above a critical thickness. The epilayer thickness was examined for the different operating cycles and was found to depend only on the number of substrate rotation cycles. These results reflect that the growth of high purity ZnSe epilayers are achieved by MOALE.

AB - ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by metalorganic atomic layer epitaxy (MOALE) using dimethylzinc (DMZn) and hydrogen selenide (H2Se) source gases with a substrate temperature of 350°C. The MOALE system is modified from atmospheric metalorganic vapor phase epitaxy (MOVPE) by rotating susceptor to allow successive exposure to streams of gases. Also long gas inlets were introduced in the pre-heating zone of the reactor for purifying the source gases. The photoluminescence spectra of the ZnSe epilayers show dominant heavy-hole and light-hole exciton emissions for thicknesses below and above a critical thickness. The epilayer thickness was examined for the different operating cycles and was found to depend only on the number of substrate rotation cycles. These results reflect that the growth of high purity ZnSe epilayers are achieved by MOALE.

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ER -

High purity ZnSe epilayers grown by atmospheric double zone metalorganic atomic layer epitaxy

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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