High purity ZnSe epilayers grown by atmospheric double zone metalorganic atomic layer epitaxy

C. D. Lee, S. I. Min, Soo Kyung Chang

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Abstract

ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by metalorganic atomic layer epitaxy (MOALE) using dimethylzinc (DMZn) and hydrogen selenide (H 2 Se) source gases with a substrate temperature of 350°C. The MOALE system is modified from atmospheric metalorganic vapor phase epitaxy (MOVPE) by rotating susceptor to allow successive exposure to streams of gases. Also long gas inlets were introduced in the pre-heating zone of the reactor for purifying the source gases. The photoluminescence spectra of the ZnSe epilayers show dominant heavy-hole and light-hole exciton emissions for thicknesses below and above a critical thickness. The epilayer thickness was examined for the different operating cycles and was found to depend only on the number of substrate rotation cycles. These results reflect that the growth of high purity ZnSe epilayers are achieved by MOALE.

Original languageEnglish
Pages (from-to)108-111
Number of pages4
JournalJournal of Crystal Growth
Volume159
Issue number1-4
DOIs
Publication statusPublished - 1996 Jan 1

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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