High-quality cobalt thin films by plasma-enhanced atomic layer deposition

Han Bo Ram Lee, H. Kim

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

High-quality Co films with low resistivity (10 μΩ cm) were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from metallorganic precursors and NH3 plasma. The deposition characteristics and film properties were investigated. Especially, we compared the results using two cyclopentadienyl Co precursors, CoCp(CO)2 and CoCp2. While low resistivity Co films were deposited by both precursors, much better self-limiting behavior was observed for CoCp2. Rutherford backscattering and X-ray photoelectron spectroscopy analysis have shown that the impurity contents in PE-ALD Co film were very low. CoSi2 formation by post deposition annealing with Ti capping layer was studied by synchrotron X-ray diffraction.

Original languageEnglish
Pages (from-to)G323-G325
JournalElectrochemical and Solid-State Letters
Volume9
Issue number11
DOIs
Publication statusPublished - 2006 Sep 21

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Cobalt
cobalt
Plasmas
Thin films
thin films
electrical resistivity
Rutherford backscattering spectroscopy
Synchrotrons
backscattering
synchrotrons
x rays
X ray photoelectron spectroscopy
photoelectron spectroscopy
Annealing
Impurities
X ray diffraction
impurities
annealing

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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High-quality cobalt thin films by plasma-enhanced atomic layer deposition. / Lee, Han Bo Ram; Kim, H.

In: Electrochemical and Solid-State Letters, Vol. 9, No. 11, 21.09.2006, p. G323-G325.

Research output: Contribution to journalArticle

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