The epitaxial growth of CoSi2 from Co with a Ti capping layer using plasma nitridation-mediated epitaxy (PNME) was demonstrated. By exposing the Si substrate to the NH3 plasma, an a -SiNx layer was formed with atomic scale thickness controllability. After Co and Ti deposition followed by annealing, high quality epitaxial CoSi2 was formed on Si(001) with a perfectly flat interface. However, the epitaxial growth was observed for Co with a Ti capping layer prepared only by ex situ deposition, not by in situ deposition. The epitaxial CoSi2 was analyzed by x-ray diffraction and a scanning transmission electron microscope. Based on these results, the mechanism of PNME and the effects of the Ti capping layer process on silicidation were discussed.
Bibliographical noteFunding Information:
The authors gratefully acknowledge the financial support of Korea Electronic Technology Institute, BK21 program, and POSTECH (core research program). Also, this work was partially supported by the Korea Research Foundation (MOEHRD, KRF-2005-005-J13102, and KRF-2006-311-D00114) and the Korea Science and Engineering Foundation (Grant No. 2007-02864). The STEM analysis was performed at the National Center for Nanomaterials and Technology (NCNT).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)