High quality epitaxial CoSi2 using plasma nitridation-mediated epitaxy: The effects of the capping layer

Han Bo Ram Lee, Gil Ho Gu, J. Y. Son, C. G. Park, Hyungjun Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The epitaxial growth of CoSi2 from Co with a Ti capping layer using plasma nitridation-mediated epitaxy (PNME) was demonstrated. By exposing the Si substrate to the NH3 plasma, an a -SiNx layer was formed with atomic scale thickness controllability. After Co and Ti deposition followed by annealing, high quality epitaxial CoSi2 was formed on Si(001) with a perfectly flat interface. However, the epitaxial growth was observed for Co with a Ti capping layer prepared only by ex situ deposition, not by in situ deposition. The epitaxial CoSi2 was analyzed by x-ray diffraction and a scanning transmission electron microscope. Based on these results, the mechanism of PNME and the effects of the Ti capping layer process on silicidation were discussed.

Original languageEnglish
Article number094509
JournalJournal of Applied Physics
Volume102
Issue number9
DOIs
Publication statusPublished - 2007 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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