High quality gate insulator for very-low temperature poly-Si TFT employing nitrous oxygen plasma pre-treatment

Moon Young Shin, Sang Myeon Han, Min Cheol Lee, Hee Sun Shin, Min Koo Han, Jang Yeon Kwon, Takashi Noguchi

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We have proposed nitrous oxide (N2O) plasma pro-treatment in order to reduce the oxide charge densities as well as to increase the breakdown field of silicon dioxide film for flexible display. Our experimental results show that the proposed treatment improved both the flat-band voltage from -3V to -1.8V and the breakdown voltage of gate oxide from 7MV/cm to 9.5MV/cm, respectively. The proposed treatment also improved poly-Si TFT characteristics such as low sub-threshold swing of 0.43V/dec.

Original languageEnglish
Pages (from-to)157-162
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume814
DOIs
Publication statusPublished - 2004
EventFlexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States
Duration: 2004 Apr 132004 Apr 16

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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