High quality microcrystalline silicon-carbide films prepared by photo-CVD method using ethylene gas as a carbon source

Seung Yeop Myong; L. E.E. Hyung Kew; Euisik Yoon; L. I.M. Koeng Su

doi:10.1557/proc-557-603

High quality microcrystalline silicon-carbide films prepared by photo-CVD method using ethylene gas as a carbon source

Seung Yeop Myong, L. E.E. Hyung Kew, Euisik Yoon, L. I.M. Koeng Su

Yonsei Advanced Science Institute

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

Hydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH₄), hydrogen (H₂), diborane (B₂H₆), and ethylene (C₂H₄) gases. Since the photo-CVD is a mild process (approx. 10mW/cm²), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10^-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C₂H₄ addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.

Original language	English
Pages (from-to)	603-608
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	557
DOIs	https://doi.org/10.1557/proc-557-603
Publication status	Published - 1999
Event	The 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices' - San Francisco, CA, USA Duration: 1999 Apr 5 → 1999 Apr 9

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "High quality microcrystalline silicon-carbide films prepared by photo-CVD method using ethylene gas as a carbon source",

abstract = "Hydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) gases. Since the photo-CVD is a mild process (approx. 10mW/cm2), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C2H4 addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.",

author = "Myong, {Seung Yeop} and {Hyung Kew}, {L. E.E.} and Euisik Yoon and {Koeng Su}, {L. I.M.}",

year = "1999",

doi = "10.1557/proc-557-603",

language = "English",

volume = "557",

pages = "603--608",

journal = "Materials Research Society Symposium - Proceedings",

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T1 - High quality microcrystalline silicon-carbide films prepared by photo-CVD method using ethylene gas as a carbon source

AU - Myong, Seung Yeop

AU - Hyung Kew, L. E.E.

AU - Yoon, Euisik

AU - Koeng Su, L. I.M.

PY - 1999

Y1 - 1999

N2 - Hydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) gases. Since the photo-CVD is a mild process (approx. 10mW/cm2), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C2H4 addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.

AB - Hydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) gases. Since the photo-CVD is a mild process (approx. 10mW/cm2), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C2H4 addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.

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EP - 608

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - The 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices'

Y2 - 5 April 1999 through 9 April 1999

ER -

High quality microcrystalline silicon-carbide films prepared by photo-CVD method using ethylene gas as a carbon source

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