High quality microcrystalline silicon-carbide films prepared by photo-CVD method using ethylene gas as a carbon source

Seung Yeop Myong, L. E.E. Hyung Kew, Euisik Yoon, L. I.M. Koeng Su

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

Hydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) gases. Since the photo-CVD is a mild process (approx. 10mW/cm2), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C2H4 addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.

Original languageEnglish
Pages (from-to)603-608
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume557
DOIs
Publication statusPublished - 1999 Jan 1
EventThe 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices' - San Francisco, CA, USA
Duration: 1999 Apr 51999 Apr 9

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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