High quality microcrystalline silicon-carbide films prepared by photo-CVD method using ethylene gas as a carbon source

Seung Yeop Myong, L. E.E. Hyung Kew, Euisik Yoon, L. I.M. Koeng Su

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

Hydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) gases. Since the photo-CVD is a mild process (approx. 10mW/cm2), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C2H4 addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.

Original languageEnglish
Pages (from-to)603-608
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume557
Publication statusPublished - 1999 Dec 1
EventThe 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices' - San Francisco, CA, USA
Duration: 1999 Apr 51999 Apr 9

Fingerprint

Microcrystalline silicon
Silicon carbide
silicon carbides
Chemical vapor deposition
Ethylene
ethylene
Carbon
Gases
vapor deposition
carbon
gases
Hydrogen
diborane
Silanes
Boron
Optical band gaps
Silicon
hydrogen
Plasma enhanced chemical vapor deposition
Amorphous silicon

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "High quality microcrystalline silicon-carbide films prepared by photo-CVD method using ethylene gas as a carbon source",
abstract = "Hydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) gases. Since the photo-CVD is a mild process (approx. 10mW/cm2), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C2H4 addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.",
author = "Myong, {Seung Yeop} and {Hyung Kew}, {L. E.E.} and Euisik Yoon and {Koeng Su}, {L. I.M.}",
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High quality microcrystalline silicon-carbide films prepared by photo-CVD method using ethylene gas as a carbon source. / Myong, Seung Yeop; Hyung Kew, L. E.E.; Yoon, Euisik; Koeng Su, L. I.M.

In: Materials Research Society Symposium - Proceedings, Vol. 557, 01.12.1999, p. 603-608.

Research output: Contribution to journalConference article

TY - JOUR

T1 - High quality microcrystalline silicon-carbide films prepared by photo-CVD method using ethylene gas as a carbon source

AU - Myong, Seung Yeop

AU - Hyung Kew, L. E.E.

AU - Yoon, Euisik

AU - Koeng Su, L. I.M.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Hydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) gases. Since the photo-CVD is a mild process (approx. 10mW/cm2), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C2H4 addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.

AB - Hydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) gases. Since the photo-CVD is a mild process (approx. 10mW/cm2), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C2H4 addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.

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