High quality p-type GaN films grown by plasma-assisted molecular beam epitaxy

J. M. Myoung, C. Kim, K. H. Shim, O. Gluschenkov, K. Kim, M. C. Yoo

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

p-type GaN films were grown on a (0001) sapphire substrate by the plasma-assisted molecular beam epitaxy. A low-contamination, high-power efficiency inductively coupled radio frequency plasma source was used, which was developed at the University of Illinois. Using an MBE system equipped with this plasma source, high-quality p-type GaN films were grown without post-growth treatment. X-ray rocking curve measurements for (0002) diffraction showed a full width at half maximum of less than 7 arcmin. The highest room-temperature hole concentration obtained was 1.4×1020 cm-3, and for the same sample, the mobility was 2.5 cm2/V·s. It is believed that the Mott-Anderson transition occurred in this sample resulting in a metallic-type conductivity in the impurity subband. Low-temperature photoluminescence had a blue emission band and no deep-level transitions, indicating the high quality of the grown films. Uniformity of the Mg doping was confirmed by secondary ion mass spectrometry.

Original languageEnglish
Pages (from-to)385-390
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume423
Publication statusPublished - 1996 Dec 1
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
Plasma sources
Plasmas
Hole concentration
Aluminum Oxide
power efficiency
Secondary ion mass spectrometry
Full width at half maximum
Sapphire
secondary ion mass spectrometry
radio frequencies
Photoluminescence
sapphire
contamination
Contamination
Diffraction
Doping (additives)
Impurities
photoluminescence

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Myoung, J. M. ; Kim, C. ; Shim, K. H. ; Gluschenkov, O. ; Kim, K. ; Yoo, M. C. / High quality p-type GaN films grown by plasma-assisted molecular beam epitaxy. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 423. pp. 385-390.
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High quality p-type GaN films grown by plasma-assisted molecular beam epitaxy. / Myoung, J. M.; Kim, C.; Shim, K. H.; Gluschenkov, O.; Kim, K.; Yoo, M. C.

In: Materials Research Society Symposium - Proceedings, Vol. 423, 01.12.1996, p. 385-390.

Research output: Contribution to journalConference article

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T1 - High quality p-type GaN films grown by plasma-assisted molecular beam epitaxy

AU - Myoung, J. M.

AU - Kim, C.

AU - Shim, K. H.

AU - Gluschenkov, O.

AU - Kim, K.

AU - Yoo, M. C.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - p-type GaN films were grown on a (0001) sapphire substrate by the plasma-assisted molecular beam epitaxy. A low-contamination, high-power efficiency inductively coupled radio frequency plasma source was used, which was developed at the University of Illinois. Using an MBE system equipped with this plasma source, high-quality p-type GaN films were grown without post-growth treatment. X-ray rocking curve measurements for (0002) diffraction showed a full width at half maximum of less than 7 arcmin. The highest room-temperature hole concentration obtained was 1.4×1020 cm-3, and for the same sample, the mobility was 2.5 cm2/V·s. It is believed that the Mott-Anderson transition occurred in this sample resulting in a metallic-type conductivity in the impurity subband. Low-temperature photoluminescence had a blue emission band and no deep-level transitions, indicating the high quality of the grown films. Uniformity of the Mg doping was confirmed by secondary ion mass spectrometry.

AB - p-type GaN films were grown on a (0001) sapphire substrate by the plasma-assisted molecular beam epitaxy. A low-contamination, high-power efficiency inductively coupled radio frequency plasma source was used, which was developed at the University of Illinois. Using an MBE system equipped with this plasma source, high-quality p-type GaN films were grown without post-growth treatment. X-ray rocking curve measurements for (0002) diffraction showed a full width at half maximum of less than 7 arcmin. The highest room-temperature hole concentration obtained was 1.4×1020 cm-3, and for the same sample, the mobility was 2.5 cm2/V·s. It is believed that the Mott-Anderson transition occurred in this sample resulting in a metallic-type conductivity in the impurity subband. Low-temperature photoluminescence had a blue emission band and no deep-level transitions, indicating the high quality of the grown films. Uniformity of the Mg doping was confirmed by secondary ion mass spectrometry.

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