High-quality parallel patterning of carbon nanotube thin films by a pulsed laser beam

Myungo Joo, Myeongkyu Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Single-walled carbon nanotube thin films solution-deposited on the glass substrate were directly patterned by a spatially-modulated pulsed laser beam (wavelength = 355 nm, pulse width = 5 ns) incident from the backside of the substrate. This method utilizes a ultrashort pulse-induced strong thermo-elastic force exerting on the film which plays a role to detach it from the substrate. The threshold energy density required for patterning was as low as 90 mJ/cm 2, making it possible to pattern over a few square centimeters by a single pulse with maximum energy of 180 mJ. The irradiated regions of the film were clearly photoetched without leaving any residual nanotubes. High-fidelity patterns could be fabricated with a feature size of 35 μm.

Original languageEnglish
Pages (from-to)3971-3974
Number of pages4
JournalThin Solid Films
Volume520
Issue number11
DOIs
Publication statusPublished - 2012 Mar 30

Fingerprint

Carbon Nanotubes
Pulsed lasers
Laser beams
Carbon nanotubes
pulsed lasers
carbon nanotubes
laser beams
Thin films
Substrates
thin films
Single-walled carbon nanotubes (SWCN)
pulses
Ultrashort pulses
Nanotubes
Laser pulses
nanotubes
pulse duration
flux density
Glass
Wavelength

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

@article{6c13df59e19a488888c1844343fbc014,
title = "High-quality parallel patterning of carbon nanotube thin films by a pulsed laser beam",
abstract = "Single-walled carbon nanotube thin films solution-deposited on the glass substrate were directly patterned by a spatially-modulated pulsed laser beam (wavelength = 355 nm, pulse width = 5 ns) incident from the backside of the substrate. This method utilizes a ultrashort pulse-induced strong thermo-elastic force exerting on the film which plays a role to detach it from the substrate. The threshold energy density required for patterning was as low as 90 mJ/cm 2, making it possible to pattern over a few square centimeters by a single pulse with maximum energy of 180 mJ. The irradiated regions of the film were clearly photoetched without leaving any residual nanotubes. High-fidelity patterns could be fabricated with a feature size of 35 μm.",
author = "Myungo Joo and Myeongkyu Lee",
year = "2012",
month = "3",
day = "30",
doi = "10.1016/j.tsf.2012.01.025",
language = "English",
volume = "520",
pages = "3971--3974",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "11",

}

High-quality parallel patterning of carbon nanotube thin films by a pulsed laser beam. / Joo, Myungo; Lee, Myeongkyu.

In: Thin Solid Films, Vol. 520, No. 11, 30.03.2012, p. 3971-3974.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-quality parallel patterning of carbon nanotube thin films by a pulsed laser beam

AU - Joo, Myungo

AU - Lee, Myeongkyu

PY - 2012/3/30

Y1 - 2012/3/30

N2 - Single-walled carbon nanotube thin films solution-deposited on the glass substrate were directly patterned by a spatially-modulated pulsed laser beam (wavelength = 355 nm, pulse width = 5 ns) incident from the backside of the substrate. This method utilizes a ultrashort pulse-induced strong thermo-elastic force exerting on the film which plays a role to detach it from the substrate. The threshold energy density required for patterning was as low as 90 mJ/cm 2, making it possible to pattern over a few square centimeters by a single pulse with maximum energy of 180 mJ. The irradiated regions of the film were clearly photoetched without leaving any residual nanotubes. High-fidelity patterns could be fabricated with a feature size of 35 μm.

AB - Single-walled carbon nanotube thin films solution-deposited on the glass substrate were directly patterned by a spatially-modulated pulsed laser beam (wavelength = 355 nm, pulse width = 5 ns) incident from the backside of the substrate. This method utilizes a ultrashort pulse-induced strong thermo-elastic force exerting on the film which plays a role to detach it from the substrate. The threshold energy density required for patterning was as low as 90 mJ/cm 2, making it possible to pattern over a few square centimeters by a single pulse with maximum energy of 180 mJ. The irradiated regions of the film were clearly photoetched without leaving any residual nanotubes. High-fidelity patterns could be fabricated with a feature size of 35 μm.

UR - http://www.scopus.com/inward/record.url?scp=84862798572&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862798572&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2012.01.025

DO - 10.1016/j.tsf.2012.01.025

M3 - Article

AN - SCOPUS:84862798572

VL - 520

SP - 3971

EP - 3974

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 11

ER -