High-rate SiO2 deposition by oxygen cold arc plasma jet at atmospheric pressure

Man H. Han, Joo H. Noh, Tae I. Lee, Jai H. Choi, Ki W. Park, Hyeon S. Hwang, Kie M. Song, Hong Koo Baik

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

SiO2 thin films were deposited by a cold arc plasma jet at atmospheric pressure. The cold arc plasma jet was operated with O2 gas of 30 L · min-1, while a He/TEOS mixture of 1 000 sccm was added to the plume of the plasma jet as a precursor. The plasma jet was continuously moved in the xy direction for uniform film thickness. The deposition rate at various conditions was studied by controlling the substrate distance, precursor inlet position, and substrate temperature; the physical and chemical properties of the films were characterized by SEM and XPS. A high deposition rate was attained using the cold arc plasma jet deposition system in open air; it is suggested that this originates from the abundant oxygen atoms produced in the cold arc plasma jet. A figure is presented.

Original languageEnglish
Pages (from-to)861-866
Number of pages6
JournalPlasma Processes and Polymers
Volume5
Issue number9
DOIs
Publication statusPublished - 2008 Nov 14

Fingerprint

Plasma jets
Deposition rates
plasma jets
Atmospheric pressure
atmospheric pressure
arcs
Oxygen
oxygen
Substrates
chemical properties
Chemical properties
plumes
Film thickness
oxygen atoms
film thickness
X ray photoelectron spectroscopy
Physical properties
physical properties
Gases
Thin films

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Polymers and Plastics

Cite this

Han, Man H. ; Noh, Joo H. ; Lee, Tae I. ; Choi, Jai H. ; Park, Ki W. ; Hwang, Hyeon S. ; Song, Kie M. ; Baik, Hong Koo. / High-rate SiO2 deposition by oxygen cold arc plasma jet at atmospheric pressure. In: Plasma Processes and Polymers. 2008 ; Vol. 5, No. 9. pp. 861-866.
@article{b3665c0312da420bb4a2b6548a8a7118,
title = "High-rate SiO2 deposition by oxygen cold arc plasma jet at atmospheric pressure",
abstract = "SiO2 thin films were deposited by a cold arc plasma jet at atmospheric pressure. The cold arc plasma jet was operated with O2 gas of 30 L · min-1, while a He/TEOS mixture of 1 000 sccm was added to the plume of the plasma jet as a precursor. The plasma jet was continuously moved in the xy direction for uniform film thickness. The deposition rate at various conditions was studied by controlling the substrate distance, precursor inlet position, and substrate temperature; the physical and chemical properties of the films were characterized by SEM and XPS. A high deposition rate was attained using the cold arc plasma jet deposition system in open air; it is suggested that this originates from the abundant oxygen atoms produced in the cold arc plasma jet. A figure is presented.",
author = "Han, {Man H.} and Noh, {Joo H.} and Lee, {Tae I.} and Choi, {Jai H.} and Park, {Ki W.} and Hwang, {Hyeon S.} and Song, {Kie M.} and Baik, {Hong Koo}",
year = "2008",
month = "11",
day = "14",
doi = "10.1002/ppap.200800061",
language = "English",
volume = "5",
pages = "861--866",
journal = "Plasma Processes and Polymers",
issn = "1612-8850",
publisher = "Wiley-VCH Verlag",
number = "9",

}

Han, MH, Noh, JH, Lee, TI, Choi, JH, Park, KW, Hwang, HS, Song, KM & Baik, HK 2008, 'High-rate SiO2 deposition by oxygen cold arc plasma jet at atmospheric pressure', Plasma Processes and Polymers, vol. 5, no. 9, pp. 861-866. https://doi.org/10.1002/ppap.200800061

High-rate SiO2 deposition by oxygen cold arc plasma jet at atmospheric pressure. / Han, Man H.; Noh, Joo H.; Lee, Tae I.; Choi, Jai H.; Park, Ki W.; Hwang, Hyeon S.; Song, Kie M.; Baik, Hong Koo.

In: Plasma Processes and Polymers, Vol. 5, No. 9, 14.11.2008, p. 861-866.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-rate SiO2 deposition by oxygen cold arc plasma jet at atmospheric pressure

AU - Han, Man H.

AU - Noh, Joo H.

AU - Lee, Tae I.

AU - Choi, Jai H.

AU - Park, Ki W.

AU - Hwang, Hyeon S.

AU - Song, Kie M.

AU - Baik, Hong Koo

PY - 2008/11/14

Y1 - 2008/11/14

N2 - SiO2 thin films were deposited by a cold arc plasma jet at atmospheric pressure. The cold arc plasma jet was operated with O2 gas of 30 L · min-1, while a He/TEOS mixture of 1 000 sccm was added to the plume of the plasma jet as a precursor. The plasma jet was continuously moved in the xy direction for uniform film thickness. The deposition rate at various conditions was studied by controlling the substrate distance, precursor inlet position, and substrate temperature; the physical and chemical properties of the films were characterized by SEM and XPS. A high deposition rate was attained using the cold arc plasma jet deposition system in open air; it is suggested that this originates from the abundant oxygen atoms produced in the cold arc plasma jet. A figure is presented.

AB - SiO2 thin films were deposited by a cold arc plasma jet at atmospheric pressure. The cold arc plasma jet was operated with O2 gas of 30 L · min-1, while a He/TEOS mixture of 1 000 sccm was added to the plume of the plasma jet as a precursor. The plasma jet was continuously moved in the xy direction for uniform film thickness. The deposition rate at various conditions was studied by controlling the substrate distance, precursor inlet position, and substrate temperature; the physical and chemical properties of the films were characterized by SEM and XPS. A high deposition rate was attained using the cold arc plasma jet deposition system in open air; it is suggested that this originates from the abundant oxygen atoms produced in the cold arc plasma jet. A figure is presented.

UR - http://www.scopus.com/inward/record.url?scp=60049086479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=60049086479&partnerID=8YFLogxK

U2 - 10.1002/ppap.200800061

DO - 10.1002/ppap.200800061

M3 - Article

AN - SCOPUS:60049086479

VL - 5

SP - 861

EP - 866

JO - Plasma Processes and Polymers

JF - Plasma Processes and Polymers

SN - 1612-8850

IS - 9

ER -