High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance

S. Y. Kim, K. Kim, Y. H. Hwang, J. Park, J. Jang, Y. Nam, Y. Kang, M. Kim, H. J. Park, Z. Lee, J. Choi, Y. Kim, S. Jeong, B. S. Bae, J. U. Park

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm2 V-1 s-1). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.

Original languageEnglish
Pages (from-to)17113-17121
Number of pages9
JournalNanoscale
Volume8
Issue number39
DOIs
Publication statusPublished - 2016 Oct 21

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Electrohydrodynamics
Thin film transistors
Printing
Transistors
Metals
Plastics
Flexible electronics
Substrates
Amorphous silicon
Passivation
Linewidth
Electronic equipment
Pixels
Display devices
Temperature
Electrodes
Oxide semiconductors
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Kim, S. Y. ; Kim, K. ; Hwang, Y. H. ; Park, J. ; Jang, J. ; Nam, Y. ; Kang, Y. ; Kim, M. ; Park, H. J. ; Lee, Z. ; Choi, J. ; Kim, Y. ; Jeong, S. ; Bae, B. S. ; Park, J. U. / High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance. In: Nanoscale. 2016 ; Vol. 8, No. 39. pp. 17113-17121.
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Kim, SY, Kim, K, Hwang, YH, Park, J, Jang, J, Nam, Y, Kang, Y, Kim, M, Park, HJ, Lee, Z, Choi, J, Kim, Y, Jeong, S, Bae, BS & Park, JU 2016, 'High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance', Nanoscale, vol. 8, no. 39, pp. 17113-17121. https://doi.org/10.1039/c6nr05577j

High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance. / Kim, S. Y.; Kim, K.; Hwang, Y. H.; Park, J.; Jang, J.; Nam, Y.; Kang, Y.; Kim, M.; Park, H. J.; Lee, Z.; Choi, J.; Kim, Y.; Jeong, S.; Bae, B. S.; Park, J. U.

In: Nanoscale, Vol. 8, No. 39, 21.10.2016, p. 17113-17121.

Research output: Contribution to journalArticle

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