High-responsivity PtSe2photodetector enhanced by photogating effect

Yajie Yang; Jinshu Li; Seunghyuk Choi; Sumin Jeon; Jeong Ho Cho; Byoung Hun Lee; Sungjoo Lee

doi:10.1063/5.0025884

High-responsivity PtSe₂photodetector enhanced by photogating effect

Yajie Yang, Jinshu Li, Seunghyuk Choi, Sumin Jeon, Jeong Ho Cho, Byoung Hun Lee, Sungjoo Lee

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Platinum diselenide (PtSe2), a recently rediscovered two-dimensional transition metal dichalcogenide, has attracted immense attention in the optoelectronic field due to its tunable bandgap, ultrastability, and high electron mobility. However, the applications of PtSe2 photodetectors are seriously restricted by their low responsivity. In this work, a high-responsivity (5 × 104 A/W) PtSe2 photodetector is obtained by exploiting a photogating effect; this is induced by the hole-trapping states, which are attributed to Se vacancies. Moreover, a gate-tunable transition between the positive and negative photoconductances is observed under light illumination. A theoretical calculation based on the Boltzmann transport theory is performed to explain the carrier transport of PtSe2, considering the contributions of charged impurity, acoustic phonon, and polar optical phonon scattering.

Original language	English
Article number	013103
Journal	Applied Physics Letters
Volume	118
Issue number	1
DOIs	https://doi.org/10.1063/5.0025884
Publication status	Published - 2021 Jan 4

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (Grant Nos. 2018R1D1A1A09081931, 2020R1A4A2002806, and 2020M3F3A2A03082047) and by the Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) (No. 2013M3A6B1078873). This work was supported by Samsung Electronics Co., Ltd.

Publisher Copyright:
© 2021 Author(s).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/5.0025884

Cite this

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title = "High-responsivity PtSe2photodetector enhanced by photogating effect",

abstract = "Platinum diselenide (PtSe2), a recently rediscovered two-dimensional transition metal dichalcogenide, has attracted immense attention in the optoelectronic field due to its tunable bandgap, ultrastability, and high electron mobility. However, the applications of PtSe2 photodetectors are seriously restricted by their low responsivity. In this work, a high-responsivity (5 × 104 A/W) PtSe2 photodetector is obtained by exploiting a photogating effect; this is induced by the hole-trapping states, which are attributed to Se vacancies. Moreover, a gate-tunable transition between the positive and negative photoconductances is observed under light illumination. A theoretical calculation based on the Boltzmann transport theory is performed to explain the carrier transport of PtSe2, considering the contributions of charged impurity, acoustic phonon, and polar optical phonon scattering.",

author = "Yajie Yang and Jinshu Li and Seunghyuk Choi and Sumin Jeon and Cho, {Jeong Ho} and Lee, {Byoung Hun} and Sungjoo Lee",

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AU - Cho, Jeong Ho

AU - Lee, Byoung Hun

AU - Lee, Sungjoo

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (Grant Nos. 2018R1D1A1A09081931, 2020R1A4A2002806, and 2020M3F3A2A03082047) and by the Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) (No. 2013M3A6B1078873). This work was supported by Samsung Electronics Co., Ltd. Publisher Copyright: © 2021 Author(s).

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N2 - Platinum diselenide (PtSe2), a recently rediscovered two-dimensional transition metal dichalcogenide, has attracted immense attention in the optoelectronic field due to its tunable bandgap, ultrastability, and high electron mobility. However, the applications of PtSe2 photodetectors are seriously restricted by their low responsivity. In this work, a high-responsivity (5 × 104 A/W) PtSe2 photodetector is obtained by exploiting a photogating effect; this is induced by the hole-trapping states, which are attributed to Se vacancies. Moreover, a gate-tunable transition between the positive and negative photoconductances is observed under light illumination. A theoretical calculation based on the Boltzmann transport theory is performed to explain the carrier transport of PtSe2, considering the contributions of charged impurity, acoustic phonon, and polar optical phonon scattering.

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