High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2

Tae Sik Yoon, Jang Yeon Kwon, Dong Hoon Lee, Ki Bum Kim, Seok Hong Min, Dong Hyuk Chae, Dae Hwan Kim, Jong Duk Lee, Byung Gook Park, Hwack Joo Lee

Research output: Contribution to journalArticle

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Abstract

The process to make nanocrystals with an average size <5 nm and a spatial density > 1012/cm2 was proposed using agglomeration and partial oxidation of thin amorphous Si0.7Ge0.3 layer deposited in between the SiO2 layers by low pressure chemical vapor deposition. The reason to use an amorphous layer is to make it possible to deposit a thin continuous layer with a thickness of less than 5 nm. Si0.7Ge0.3 alloy layer was used to control the spatial density of the nanocrystals by using selective oxidation of Si in Si0.7Ge0.3 alloy layer. The single electron memory, similar to a flash type memory device was fabricated using these Si0.7Ge0.3 nanocrystals. The Coulomb blockade effect could be clearly observed at room temperature with a threshold voltage shift of about 2.4 V, which demonstrated the formation of nanocrystals with a high spatial density.

Original languageEnglish
Pages (from-to)2449-2453
Number of pages5
JournalJournal of Applied Physics
Volume87
Issue number5
DOIs
Publication statusPublished - 2000 Mar

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nanocrystals
oxidation
agglomeration
threshold voltage
flash
low pressure
deposits
vapor deposition
shift
room temperature
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Yoon, Tae Sik ; Kwon, Jang Yeon ; Lee, Dong Hoon ; Kim, Ki Bum ; Min, Seok Hong ; Chae, Dong Hyuk ; Kim, Dae Hwan ; Lee, Jong Duk ; Park, Byung Gook ; Lee, Hwack Joo. / High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2. In: Journal of Applied Physics. 2000 ; Vol. 87, No. 5. pp. 2449-2453.
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abstract = "The process to make nanocrystals with an average size <5 nm and a spatial density > 1012/cm2 was proposed using agglomeration and partial oxidation of thin amorphous Si0.7Ge0.3 layer deposited in between the SiO2 layers by low pressure chemical vapor deposition. The reason to use an amorphous layer is to make it possible to deposit a thin continuous layer with a thickness of less than 5 nm. Si0.7Ge0.3 alloy layer was used to control the spatial density of the nanocrystals by using selective oxidation of Si in Si0.7Ge0.3 alloy layer. The single electron memory, similar to a flash type memory device was fabricated using these Si0.7Ge0.3 nanocrystals. The Coulomb blockade effect could be clearly observed at room temperature with a threshold voltage shift of about 2.4 V, which demonstrated the formation of nanocrystals with a high spatial density.",
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Yoon, TS, Kwon, JY, Lee, DH, Kim, KB, Min, SH, Chae, DH, Kim, DH, Lee, JD, Park, BG & Lee, HJ 2000, 'High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2', Journal of Applied Physics, vol. 87, no. 5, pp. 2449-2453. https://doi.org/10.1063/1.372200

High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2. / Yoon, Tae Sik; Kwon, Jang Yeon; Lee, Dong Hoon; Kim, Ki Bum; Min, Seok Hong; Chae, Dong Hyuk; Kim, Dae Hwan; Lee, Jong Duk; Park, Byung Gook; Lee, Hwack Joo.

In: Journal of Applied Physics, Vol. 87, No. 5, 03.2000, p. 2449-2453.

Research output: Contribution to journalArticle

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AU - Yoon, Tae Sik

AU - Kwon, Jang Yeon

AU - Lee, Dong Hoon

AU - Kim, Ki Bum

AU - Min, Seok Hong

AU - Chae, Dong Hyuk

AU - Kim, Dae Hwan

AU - Lee, Jong Duk

AU - Park, Byung Gook

AU - Lee, Hwack Joo

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