High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2

Tae Sik Yoon, Jang Yeon Kwon, Dong Hoon Lee, Ki Bum Kim, Seok Hong Min, Dong Hyuk Chae, Dae Hwan Kim, Jong Duk Lee, Byung Gook Park, Hwack Joo Lee

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20 Citations (Scopus)


The process to make nanocrystals with an average size <5 nm and a spatial density > 1012/cm2 was proposed using agglomeration and partial oxidation of thin amorphous Si0.7Ge0.3 layer deposited in between the SiO2 layers by low pressure chemical vapor deposition. The reason to use an amorphous layer is to make it possible to deposit a thin continuous layer with a thickness of less than 5 nm. Si0.7Ge0.3 alloy layer was used to control the spatial density of the nanocrystals by using selective oxidation of Si in Si0.7Ge0.3 alloy layer. The single electron memory, similar to a flash type memory device was fabricated using these Si0.7Ge0.3 nanocrystals. The Coulomb blockade effect could be clearly observed at room temperature with a threshold voltage shift of about 2.4 V, which demonstrated the formation of nanocrystals with a high spatial density.

Original languageEnglish
Pages (from-to)2449-2453
Number of pages5
JournalJournal of Applied Physics
Issue number5
Publication statusPublished - 2000 Mar

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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