High Speed and High Reliability InP/InGaAs Avalanche Photodiode for Optical Communications

Kyung Sook Hyun, Youngmi Paek, Yong Hwan Kwon, Ilgu Yun, El Hang Lee

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

We present a review of the characteristics of several different types of high speed InGaAs/InP avalanche photodiode (APD)s that we have developed for different guard ring depth and for different main p-n junction shape. The APD structure that we propose consists of a greatly reduced width in InP multiplication layer and a high doping concentrated electric field buffer layer, where we also adopted a floating guard ring and a shaped main junction with recess etching for a reliable operation of an APD. We obtained high reliability APDs, which are tested for two-dimensional gain behavior and for accelerated life tests by monitoring dark current and breakdown voltage. The gain and bandwidth product of the best of our APDs was measured as high as 80 GHz.

Original languageEnglish
Pages (from-to)130-137
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4999
DOIs
Publication statusPublished - 2003 Sep 29
EventQuantum Sensing: Evolution and Revolution from Past to Future - San Jose, CA, United States
Duration: 2003 Jan 272003 Jan 30

Fingerprint

pamidronate
Avalanche Photodiode
Avalanche photodiodes
InGaAs
Optical Communication
Optical communication
avalanches
photodiodes
optical communication
High Speed
high speed
accelerated life tests
Accelerated Life Test
Ring
recesses
Dark Current
Dark currents
rings
Buffer layers
Etching

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

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abstract = "We present a review of the characteristics of several different types of high speed InGaAs/InP avalanche photodiode (APD)s that we have developed for different guard ring depth and for different main p-n junction shape. The APD structure that we propose consists of a greatly reduced width in InP multiplication layer and a high doping concentrated electric field buffer layer, where we also adopted a floating guard ring and a shaped main junction with recess etching for a reliable operation of an APD. We obtained high reliability APDs, which are tested for two-dimensional gain behavior and for accelerated life tests by monitoring dark current and breakdown voltage. The gain and bandwidth product of the best of our APDs was measured as high as 80 GHz.",
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High Speed and High Reliability InP/InGaAs Avalanche Photodiode for Optical Communications. / Hyun, Kyung Sook; Paek, Youngmi; Kwon, Yong Hwan; Yun, Ilgu; Lee, El Hang.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4999, 29.09.2003, p. 130-137.

Research output: Contribution to journalConference article

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