We present a high-speed monolithically integrated optical receiver fabricated with 0.13- μm standard complementary metal-oxide-semiconductor (CMOS) technology. The optical receiver consists of a CMOS-compatible avalanche photodetector (CMOS-APD) and a transimpedance amplifier (TIA). The CMOS-APD provides high responsivity as well as large bandwidth. Its bandwidth is further enhanced by the TIA having negative capacitance, which compensates undesired parasitic capacitance. With the CMOS integrated optical receiver, 4.25-Gb/s optical data are successfully transmitted with a bit-error rate less than 10 -12 at the incident optical power of 5.5 dBm.
Bibliographical noteFunding Information:
Manuscript received May 25, 2009; revised July 09, 2009. First published August 25, 2009; current version published October 02, 2009. This work was supported in part by the IT R&D program of MKE/KEIT [2009-F-010-01].
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering