Abstract
In this letter, we report a high-speed PIN photodetector fabricated on Ge with planar interdigitated p+ - and n+-fingers that were formed by ion implantation into a Ge substrate. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-μm finger width and 2-μm spacing with 50 × 50 μm2 active area. At a wavelength of 1.3 μm, the bandwidth was 1.8, 2.6, and 3 GHz at bias voltages of 5, 10, and 15 V, respectively. The dark current was 0.9 and 10 μA at 5 and 15 V, respectively. This photodetector exhibited external quantum efficiencies over 60 % in the spectral range 1.0-1.5 μm. At a wavelength of 1.3 μm, the external quantum efficiency was 67%.
Original language | English |
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Pages (from-to) | 369-371 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 14 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2002 Mar |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering