High-speed interdigitated Ge PIN photodetectors

Jungwoo Oh, Sebastian Csutak, J. C. Campbell

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

In this letter, we report a high-speed PIN photodetector fabricated on Ge with planar interdigitated p+ - and n+-fingers that were formed by ion implantation into a Ge substrate. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-μm finger width and 2-μm spacing with 50 × 50 μm2 active area. At a wavelength of 1.3 μm, the bandwidth was 1.8, 2.6, and 3 GHz at bias voltages of 5, 10, and 15 V, respectively. The dark current was 0.9 and 10 μA at 5 and 15 V, respectively. This photodetector exhibited external quantum efficiencies over 60 % in the spectral range 1.0-1.5 μm. At a wavelength of 1.3 μm, the external quantum efficiency was 67%.

Original languageEnglish
Pages (from-to)369-371
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number3
DOIs
Publication statusPublished - 2002 Mar 1

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Photodetectors
Quantum efficiency
photometers
quantum efficiency
high speed
bandwidth
Bandwidth
Wavelength
Dark currents
Bias voltage
dark current
wavelengths
Ion implantation
ion implantation
spacing
electric potential
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Oh, Jungwoo ; Csutak, Sebastian ; Campbell, J. C. / High-speed interdigitated Ge PIN photodetectors. In: IEEE Photonics Technology Letters. 2002 ; Vol. 14, No. 3. pp. 369-371.
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High-speed interdigitated Ge PIN photodetectors. / Oh, Jungwoo; Csutak, Sebastian; Campbell, J. C.

In: IEEE Photonics Technology Letters, Vol. 14, No. 3, 01.03.2002, p. 369-371.

Research output: Contribution to journalArticle

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