Abstract
In this letter, we report a high-speed PIN photodetector fabricated on Ge with planar interdigitated p+ - and n+-fingers that were formed by ion implantation into a Ge substrate. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-μm finger width and 2-μm spacing with 50 × 50 μm2 active area. At a wavelength of 1.3 μm, the bandwidth was 1.8, 2.6, and 3 GHz at bias voltages of 5, 10, and 15 V, respectively. The dark current was 0.9 and 10 μA at 5 and 15 V, respectively. This photodetector exhibited external quantum efficiencies over 60 % in the spectral range 1.0-1.5 μm. At a wavelength of 1.3 μm, the external quantum efficiency was 67%.
| Original language | English |
|---|---|
| Pages (from-to) | 369-371 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 14 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2002 Mar 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Oh, J., Csutak, S., & Campbell, J. C. (2002). High-speed interdigitated Ge PIN photodetectors. IEEE Photonics Technology Letters, 14(3), 369-371. https://doi.org/10.1109/68.986816