High-speed interdigitated Ge PIN photodetectors

Jungwoo Oh, Sebastian Csutak, J. C. Campbell

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Abstract

In this letter, we report a high-speed PIN photodetector fabricated on Ge with planar interdigitated p+ - and n+-fingers that were formed by ion implantation into a Ge substrate. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-μm finger width and 2-μm spacing with 50 × 50 μm2 active area. At a wavelength of 1.3 μm, the bandwidth was 1.8, 2.6, and 3 GHz at bias voltages of 5, 10, and 15 V, respectively. The dark current was 0.9 and 10 μA at 5 and 15 V, respectively. This photodetector exhibited external quantum efficiencies over 60 % in the spectral range 1.0-1.5 μm. At a wavelength of 1.3 μm, the external quantum efficiency was 67%.

Original languageEnglish
Pages (from-to)369-371
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number3
DOIs
Publication statusPublished - 2002 Mar 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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