Abstract
In this letter, we report a high-speed PIN photodetector fabricated on Ge with planar interdigitated p+ - and n+-fingers that were formed by ion implantation into a Ge substrate. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-μm finger width and 2-μm spacing with 50 × 50 μm2 active area. At a wavelength of 1.3 μm, the bandwidth was 1.8, 2.6, and 3 GHz at bias voltages of 5, 10, and 15 V, respectively. The dark current was 0.9 and 10 μA at 5 and 15 V, respectively. This photodetector exhibited external quantum efficiencies over 60 % in the spectral range 1.0-1.5 μm. At a wavelength of 1.3 μm, the external quantum efficiency was 67%.
| Original language | English |
|---|---|
| Pages (from-to) | 369-371 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 14 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2002 Mar 1 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy (miscellaneous)
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High-speed interdigitated Ge PIN photodetectors. / Oh, Jungwoo; Csutak, Sebastian; Campbell, J. C.
In: IEEE Photonics Technology Letters, Vol. 14, No. 3, 01.03.2002, p. 369-371.Research output: Contribution to journal › Article
TY - JOUR
T1 - High-speed interdigitated Ge PIN photodetectors
AU - Oh, Jungwoo
AU - Csutak, Sebastian
AU - Campbell, J. C.
PY - 2002/3/1
Y1 - 2002/3/1
N2 - In this letter, we report a high-speed PIN photodetector fabricated on Ge with planar interdigitated p+ - and n+-fingers that were formed by ion implantation into a Ge substrate. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-μm finger width and 2-μm spacing with 50 × 50 μm2 active area. At a wavelength of 1.3 μm, the bandwidth was 1.8, 2.6, and 3 GHz at bias voltages of 5, 10, and 15 V, respectively. The dark current was 0.9 and 10 μA at 5 and 15 V, respectively. This photodetector exhibited external quantum efficiencies over 60 % in the spectral range 1.0-1.5 μm. At a wavelength of 1.3 μm, the external quantum efficiency was 67%.
AB - In this letter, we report a high-speed PIN photodetector fabricated on Ge with planar interdigitated p+ - and n+-fingers that were formed by ion implantation into a Ge substrate. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-μm finger width and 2-μm spacing with 50 × 50 μm2 active area. At a wavelength of 1.3 μm, the bandwidth was 1.8, 2.6, and 3 GHz at bias voltages of 5, 10, and 15 V, respectively. The dark current was 0.9 and 10 μA at 5 and 15 V, respectively. This photodetector exhibited external quantum efficiencies over 60 % in the spectral range 1.0-1.5 μm. At a wavelength of 1.3 μm, the external quantum efficiency was 67%.
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U2 - 10.1109/68.986816
DO - 10.1109/68.986816
M3 - Article
VL - 14
SP - 369
EP - 371
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 3
ER -