High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates

Jong-Hyun Ahn, Hoon Sik Kim, Keon Jae Lee, Zhengtao Zhu, Etienne Menard, Ralph G. Nuzzo, John A. Rogers

Research output: Contribution to journalArticle

138 Citations (Scopus)

Abstract

This letter describes the fabrication and properties of bendable single-crystal-silicon thin film transistors formed on plastic substrates. These devices use ultrathin single-crystal silicon ribbons for the semiconductor, with optimized device layouts and low-temperature gate dielectrics. The level of performance that can be achieved approaches that of traditional silicon transistors on rigid bulk wafers: effective mobilities > 500 cm2/V · s, ON/OFF ratios > 105, and response frequencies > 500 MHz at channel lengths of 2 μm. This type of device might provide a promising route to flexible digital circuits for classes of applications whose performance requirements cannot be satisfied with organic semiconductors, amorphous silicon, or other related approaches.

Original languageEnglish
Pages (from-to)460-462
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number6
DOIs
Publication statusPublished - 2006 Jun 1

Fingerprint

Silicon
Thin film transistors
Single crystals
Plastics
Substrates
Semiconducting organic compounds
Gate dielectrics
Digital circuits
Amorphous silicon
Frequency response
Transistors
Semiconductor materials
Fabrication
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ahn, Jong-Hyun ; Kim, Hoon Sik ; Lee, Keon Jae ; Zhu, Zhengtao ; Menard, Etienne ; Nuzzo, Ralph G. ; Rogers, John A. / High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates. In: IEEE Electron Device Letters. 2006 ; Vol. 27, No. 6. pp. 460-462.
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High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates. / Ahn, Jong-Hyun; Kim, Hoon Sik; Lee, Keon Jae; Zhu, Zhengtao; Menard, Etienne; Nuzzo, Ralph G.; Rogers, John A.

In: IEEE Electron Device Letters, Vol. 27, No. 6, 01.06.2006, p. 460-462.

Research output: Contribution to journalArticle

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