High stability of inkjet printed indium zinc oxide thin film transistors

Kyung Bae Park, Myung Kwan Ryu, Jong Baek Seon, Kwang Hee Lee, Sang Yoon Lee, Woong Hee Jeong, Jung Hyun Bae, Hyun Jae Kim

Research output: Contribution to conferencePaper

Abstract

We report the fabrication of solution-processed Indium zinc oxide(IZO) transistors using inkjet printing. A IZO ink was prepared by dissolving indium nitrate, zinc acetate into 2-methoxyethanol. The compositions of dropped IZO films have high stoichiometric characteristics with low carbon impurity. Depletion mode IZO field effect transistors were fabricated showing a field-effect mobility of 0.2cm2/Vs. An electrically and thermally biased stability showed a threshold voltage deviation of 1.46V for 3hours.

Original languageEnglish
Pages1837-1838
Number of pages2
Publication statusPublished - 2010 Dec 1
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 2010 Dec 12010 Dec 3

Other

Other17th International Display Workshops, IDW'10
CountryJapan
CityFukuoka
Period10/12/110/12/3

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All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction

Cite this

Park, K. B., Ryu, M. K., Seon, J. B., Lee, K. H., Lee, S. Y., Jeong, W. H., Bae, J. H., & Kim, H. J. (2010). High stability of inkjet printed indium zinc oxide thin film transistors. 1837-1838. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.