Silicon carbide (SiC) films deposited by chemical vapor deposition were exposed to hydrogen chloride and hydrogen gaseous mixture (5% HCl and 95% H2) at 1200°C with a total pressure of 101 kPa in order to investigate their durability against the corrosive gas. Corrosion resistance against the HCl and H2 gaseous mixture was related to the microstructure and preferred orientation of the SiC films, which depend on the deposition conditions. The stratified structure with a small crystallite had higher corrosion resistance than the faceted columnar structure, and (111) oriented films had higher resistance than (220) oriented films.
|Number of pages||4|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - 1996 Jan 1|
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Materials Chemistry