High-temperature corrosion resistance of chemically vapor deposited silicon carbide against hydrogen chloride and hydrogen gaseous environments

Dong Joo Kim, Doo Jin Choi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Silicon carbide (SiC) films deposited by chemical vapor deposition were exposed to hydrogen chloride and hydrogen gaseous mixture (5% HCl and 95% H2) at 1200°C with a total pressure of 101 kPa in order to investigate their durability against the corrosive gas. Corrosion resistance against the HCl and H2 gaseous mixture was related to the microstructure and preferred orientation of the SiC films, which depend on the deposition conditions. The stratified structure with a small crystallite had higher corrosion resistance than the faceted columnar structure, and (111) oriented films had higher resistance than (220) oriented films.

Original languageEnglish
Pages (from-to)503-506
Number of pages4
JournalJournal of the American Ceramic Society
Volume79
Issue number2
DOIs
Publication statusPublished - 1996 Jan 1

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Hydrochloric Acid
Silicon carbide
Corrosion resistance
Hydrogen
Vapors
Caustics
Temperature
Chemical vapor deposition
Durability
Gases
Microstructure
silicon carbide

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

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AB - Silicon carbide (SiC) films deposited by chemical vapor deposition were exposed to hydrogen chloride and hydrogen gaseous mixture (5% HCl and 95% H2) at 1200°C with a total pressure of 101 kPa in order to investigate their durability against the corrosive gas. Corrosion resistance against the HCl and H2 gaseous mixture was related to the microstructure and preferred orientation of the SiC films, which depend on the deposition conditions. The stratified structure with a small crystallite had higher corrosion resistance than the faceted columnar structure, and (111) oriented films had higher resistance than (220) oriented films.

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