The dc and RF performance of a p-type diamond MESFET is simulated and compared with the simulated performance of an n-type GaAs MESFET over the operating temperature range, 300–923 K. Power performance of a diamond MESFET is shown to improve with increasing temperature and to exceed that of a GaAs MESFET when operated at temperatures higher than 550 K. At 923 K the simulated diamond MESFET produces about 0.8 W/mm of output power for an operating frequency of 5 GHz. Small signal current gain for a diamond MESFET is also found to increase with temperature. The cut-off frequency, fT' of a diamond MESFET at 923 K is comparable with that of a GaAs MESFET at room temperature. It is concluded that microwave power applications of MESFET's in p-type diamond but otherwise conventional design is limited to high temperature.
Bibliographical noteFunding Information:
Manuscript received December 16, 1993; revised April 23, 1994. This work was supported in part by Kobe Development Corporation under Research Agreement #92-1-59-01, M. W. Shin and R. J. Trew are with the Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, OH 44106 USA. G. L. Bilbro is with the Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695 USA. IEEE Log Number 9403401.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering