High Temperature DC and RF Performance of P-Type Diamond MESFET: Comparison with N-Type GaAs MESFET

M. W. Shin, R. J. Trew, G. L. Bilbro

Research output: Contribution to journalArticle

11 Citations (Scopus)


The dc and RF performance of a p-type diamond MESFET is simulated and compared with the simulated performance of an n-type GaAs MESFET over the operating temperature range, 300–923 K. Power performance of a diamond MESFET is shown to improve with increasing temperature and to exceed that of a GaAs MESFET when operated at temperatures higher than 550 K. At 923 K the simulated diamond MESFET produces about 0.8 W/mm of output power for an operating frequency of 5 GHz. Small signal current gain for a diamond MESFET is also found to increase with temperature. The cut-off frequency, fT' of a diamond MESFET at 923 K is comparable with that of a GaAs MESFET at room temperature. It is concluded that microwave power applications of MESFET's in p-type diamond but otherwise conventional design is limited to high temperature.

Original languageEnglish
Pages (from-to)292-294
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
Publication statusPublished - 1994 Aug


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this