High temperature dc and RF performance of p-type diamond MESFET: Comparison with N-type GaAs MESFET

M. W. Shin, R. J. Trew, G. L. Bilbro

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The de and RF performance of a p-type diamond MESFET is simulated and compared with the simulated performance of an n-type GaAs MESFET over the operating temperature range, 300-923 K. Power performance of a diamond MESFET is shown to improve with increasing temperature and to exceed that of a GaAs MESFET when operated at temperatures higher than 550 K. At 923 K the simulated diamond MESFET produces about 0.8 W/mm of output power for an operating frequency of 5 GHz. Small signal current gain for a diamond MESFET is also found to increase with temperature. The cut-ott frequency, fT’ of a diamond MESFET at 923 K is comparable with that of a GaAs MESFET at room temperature. It is concluded that microwave power applications of MESFET’s in p-type diamond but otherwise conventional design is limited to high temperature.

Original languageEnglish
Title of host publicationHigh-Temperature Electronics
PublisherWiley-IEEE Press
Pages478-480
Number of pages3
ISBN (Electronic)9780470544884
ISBN (Print)0780334779, 9780780334779
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Diamond
Diamonds
Temperature
gallium arsenide
Microwaves

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Computer Science(all)
  • Materials Science(all)

Cite this

Shin, M. W., Trew, R. J., & Bilbro, G. L. (1998). High temperature dc and RF performance of p-type diamond MESFET: Comparison with N-type GaAs MESFET. In High-Temperature Electronics (pp. 478-480). Wiley-IEEE Press. https://doi.org/10.1109/9780470544884.ch62
Shin, M. W. ; Trew, R. J. ; Bilbro, G. L. / High temperature dc and RF performance of p-type diamond MESFET : Comparison with N-type GaAs MESFET. High-Temperature Electronics. Wiley-IEEE Press, 1998. pp. 478-480
@inbook{75d23c562026449cbad6b540256b30f0,
title = "High temperature dc and RF performance of p-type diamond MESFET: Comparison with N-type GaAs MESFET",
abstract = "The de and RF performance of a p-type diamond MESFET is simulated and compared with the simulated performance of an n-type GaAs MESFET over the operating temperature range, 300-923 K. Power performance of a diamond MESFET is shown to improve with increasing temperature and to exceed that of a GaAs MESFET when operated at temperatures higher than 550 K. At 923 K the simulated diamond MESFET produces about 0.8 W/mm of output power for an operating frequency of 5 GHz. Small signal current gain for a diamond MESFET is also found to increase with temperature. The cut-ott frequency, fT’ of a diamond MESFET at 923 K is comparable with that of a GaAs MESFET at room temperature. It is concluded that microwave power applications of MESFET’s in p-type diamond but otherwise conventional design is limited to high temperature.",
author = "Shin, {M. W.} and Trew, {R. J.} and Bilbro, {G. L.}",
year = "1998",
month = "1",
day = "1",
doi = "10.1109/9780470544884.ch62",
language = "English",
isbn = "0780334779",
pages = "478--480",
booktitle = "High-Temperature Electronics",
publisher = "Wiley-IEEE Press",

}

High temperature dc and RF performance of p-type diamond MESFET : Comparison with N-type GaAs MESFET. / Shin, M. W.; Trew, R. J.; Bilbro, G. L.

High-Temperature Electronics. Wiley-IEEE Press, 1998. p. 478-480.

Research output: Chapter in Book/Report/Conference proceedingChapter

TY - CHAP

T1 - High temperature dc and RF performance of p-type diamond MESFET

T2 - Comparison with N-type GaAs MESFET

AU - Shin, M. W.

AU - Trew, R. J.

AU - Bilbro, G. L.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The de and RF performance of a p-type diamond MESFET is simulated and compared with the simulated performance of an n-type GaAs MESFET over the operating temperature range, 300-923 K. Power performance of a diamond MESFET is shown to improve with increasing temperature and to exceed that of a GaAs MESFET when operated at temperatures higher than 550 K. At 923 K the simulated diamond MESFET produces about 0.8 W/mm of output power for an operating frequency of 5 GHz. Small signal current gain for a diamond MESFET is also found to increase with temperature. The cut-ott frequency, fT’ of a diamond MESFET at 923 K is comparable with that of a GaAs MESFET at room temperature. It is concluded that microwave power applications of MESFET’s in p-type diamond but otherwise conventional design is limited to high temperature.

AB - The de and RF performance of a p-type diamond MESFET is simulated and compared with the simulated performance of an n-type GaAs MESFET over the operating temperature range, 300-923 K. Power performance of a diamond MESFET is shown to improve with increasing temperature and to exceed that of a GaAs MESFET when operated at temperatures higher than 550 K. At 923 K the simulated diamond MESFET produces about 0.8 W/mm of output power for an operating frequency of 5 GHz. Small signal current gain for a diamond MESFET is also found to increase with temperature. The cut-ott frequency, fT’ of a diamond MESFET at 923 K is comparable with that of a GaAs MESFET at room temperature. It is concluded that microwave power applications of MESFET’s in p-type diamond but otherwise conventional design is limited to high temperature.

UR - http://www.scopus.com/inward/record.url?scp=85051944000&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85051944000&partnerID=8YFLogxK

U2 - 10.1109/9780470544884.ch62

DO - 10.1109/9780470544884.ch62

M3 - Chapter

AN - SCOPUS:85051944000

SN - 0780334779

SN - 9780780334779

SP - 478

EP - 480

BT - High-Temperature Electronics

PB - Wiley-IEEE Press

ER -