High temperature dc and RF performance of p-type diamond MESFET: Comparison with N-type GaAs MESFET

M. W. Shin, R. J. Trew, G. L. Bilbro

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The de and RF performance of a p-type diamond MESFET is simulated and compared with the simulated performance of an n-type GaAs MESFET over the operating temperature range, 300-923 K. Power performance of a diamond MESFET is shown to improve with increasing temperature and to exceed that of a GaAs MESFET when operated at temperatures higher than 550 K. At 923 K the simulated diamond MESFET produces about 0.8 W/mm of output power for an operating frequency of 5 GHz. Small signal current gain for a diamond MESFET is also found to increase with temperature. The cut-ott frequency, fT’ of a diamond MESFET at 923 K is comparable with that of a GaAs MESFET at room temperature. It is concluded that microwave power applications of MESFET’s in p-type diamond but otherwise conventional design is limited to high temperature.

Original languageEnglish
Title of host publicationHigh-Temperature Electronics
PublisherWiley-IEEE Press
Pages478-480
Number of pages3
ISBN (Electronic)9780470544884
ISBN (Print)0780334779, 9780780334779
DOIs
Publication statusPublished - 1998 Jan 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Computer Science(all)
  • Materials Science(all)

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    Shin, M. W., Trew, R. J., & Bilbro, G. L. (1998). High temperature dc and RF performance of p-type diamond MESFET: Comparison with N-type GaAs MESFET. In High-Temperature Electronics (pp. 478-480). Wiley-IEEE Press. https://doi.org/10.1109/9780470544884.ch62