High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process

Won Sang Lee; Yoon Ho Choi; Ki Woong Chung; Dong Chan Moon; Moo Whan Shin

doi:10.1049/el:20000215

High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process

Won Sang Lee, Yoon Ho Choi, Ki Woong Chung, Dong Chan Moon, Moo Whan Shin

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Recessed gate GaN MESFETs have been fabricated by employing a new photoelectrochemical etching method which utilises a photoresistive mask and KOH based etchant. The etching rate of the etchant with 1.0mol% of KOH for n-GaN is as high as 1600 angstrom/min at an Hg illumination intensity of 35mW/cm². The fabricated GaN MESFET exhibits current saturation at V_ds = 4V and pinch-off at V_gs = -3V with a peak drain current of approx. 240mA/mm at 300K. The DC performance of the device does not change considerably with temperature in the range 300-473K.

Original language	English
Pages (from-to)	265-267
Number of pages	3
Journal	Electronics Letters
Volume	36
Issue number	3
DOIs	https://doi.org/10.1049/el:20000215
Publication status	Published - 2000 Feb 3

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20000215

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title = "High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process",

abstract = "Recessed gate GaN MESFETs have been fabricated by employing a new photoelectrochemical etching method which utilises a photoresistive mask and KOH based etchant. The etching rate of the etchant with 1.0mol% of KOH for n-GaN is as high as 1600 angstrom/min at an Hg illumination intensity of 35mW/cm2. The fabricated GaN MESFET exhibits current saturation at Vds = 4V and pinch-off at Vgs = -3V with a peak drain current of approx. 240mA/mm at 300K. The DC performance of the device does not change considerably with temperature in the range 300-473K.",

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T1 - High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process

AU - Lee, Won Sang

AU - Choi, Yoon Ho

AU - Chung, Ki Woong

AU - Moon, Dong Chan

AU - Shin, Moo Whan

PY - 2000/2/3

Y1 - 2000/2/3

N2 - Recessed gate GaN MESFETs have been fabricated by employing a new photoelectrochemical etching method which utilises a photoresistive mask and KOH based etchant. The etching rate of the etchant with 1.0mol% of KOH for n-GaN is as high as 1600 angstrom/min at an Hg illumination intensity of 35mW/cm2. The fabricated GaN MESFET exhibits current saturation at Vds = 4V and pinch-off at Vgs = -3V with a peak drain current of approx. 240mA/mm at 300K. The DC performance of the device does not change considerably with temperature in the range 300-473K.

AB - Recessed gate GaN MESFETs have been fabricated by employing a new photoelectrochemical etching method which utilises a photoresistive mask and KOH based etchant. The etching rate of the etchant with 1.0mol% of KOH for n-GaN is as high as 1600 angstrom/min at an Hg illumination intensity of 35mW/cm2. The fabricated GaN MESFET exhibits current saturation at Vds = 4V and pinch-off at Vgs = -3V with a peak drain current of approx. 240mA/mm at 300K. The DC performance of the device does not change considerably with temperature in the range 300-473K.

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High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process

Abstract

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