Abstract
Recessed gate GaN MESFETs have been fabricated by employing a new photoelectrochemical etching method which utilises a photoresistive mask and KOH based etchant. The etching rate of the etchant with 1.0mol% of KOH for n-GaN is as high as 1600 angstrom/min at an Hg illumination intensity of 35mW/cm2. The fabricated GaN MESFET exhibits current saturation at Vds = 4V and pinch-off at Vgs = -3V with a peak drain current of approx. 240mA/mm at 300K. The DC performance of the device does not change considerably with temperature in the range 300-473K.
Original language | English |
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Pages (from-to) | 265-267 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 36 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2000 Feb 3 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering