High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process

Won Sang Lee, Yoon Ho Choi, Ki Woong Chung, Dong Chan Moon, Moo Whan Shin

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Recessed gate GaN MESFETs have been fabricated by employing a new photoelectrochemical etching method which utilises a photoresistive mask and KOH based etchant. The etching rate of the etchant with 1.0mol% of KOH for n-GaN is as high as 1600 angstrom/min at an Hg illumination intensity of 35mW/cm2. The fabricated GaN MESFET exhibits current saturation at Vds = 4V and pinch-off at Vgs = -3V with a peak drain current of approx. 240mA/mm at 300K. The DC performance of the device does not change considerably with temperature in the range 300-473K.

Original languageEnglish
Pages (from-to)265-267
Number of pages3
JournalElectronics Letters
Volume36
Issue number3
DOIs
Publication statusPublished - 2000 Feb 3

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Etching
Drain current
Masks
Lighting
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Lee, Won Sang ; Choi, Yoon Ho ; Chung, Ki Woong ; Moon, Dong Chan ; Shin, Moo Whan. / High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process. In: Electronics Letters. 2000 ; Vol. 36, No. 3. pp. 265-267.
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High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process. / Lee, Won Sang; Choi, Yoon Ho; Chung, Ki Woong; Moon, Dong Chan; Shin, Moo Whan.

In: Electronics Letters, Vol. 36, No. 3, 03.02.2000, p. 265-267.

Research output: Contribution to journalArticle

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