High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process

Won Sang Lee, Yoon Ho Choi, Ki Woong Chung, Dong Chan Moon, Moo Whan Shin

Research output: Contribution to journalArticle

19 Citations (Scopus)


Recessed gate GaN MESFETs have been fabricated by employing a new photoelectrochemical etching method which utilises a photoresistive mask and KOH based etchant. The etching rate of the etchant with 1.0mol% of KOH for n-GaN is as high as 1600 angstrom/min at an Hg illumination intensity of 35mW/cm2. The fabricated GaN MESFET exhibits current saturation at Vds = 4V and pinch-off at Vgs = -3V with a peak drain current of approx. 240mA/mm at 300K. The DC performance of the device does not change considerably with temperature in the range 300-473K.

Original languageEnglish
Pages (from-to)265-267
Number of pages3
JournalElectronics Letters
Issue number3
Publication statusPublished - 2000 Feb 3


All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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