Abstract
Recessed gate GaN MESFETs have been fabricated by employing a new photoelectrochemical etching method which utilises a photoresistive mask and KOH based etchant. The etching rate of the etchant with 1.0mol% of KOH for n-GaN is as high as 1600 angstrom/min at an Hg illumination intensity of 35mW/cm2. The fabricated GaN MESFET exhibits current saturation at Vds = 4V and pinch-off at Vgs = -3V with a peak drain current of approx. 240mA/mm at 300K. The DC performance of the device does not change considerably with temperature in the range 300-473K.
| Original language | English |
|---|---|
| Pages (from-to) | 265-267 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 36 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2000 Feb 3 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
}
High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process. / Lee, Won Sang; Choi, Yoon Ho; Chung, Ki Woong; Moon, Dong Chan; Shin, Moo Whan.
In: Electronics Letters, Vol. 36, No. 3, 03.02.2000, p. 265-267.Research output: Contribution to journal › Article
TY - JOUR
T1 - High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process
AU - Lee, Won Sang
AU - Choi, Yoon Ho
AU - Chung, Ki Woong
AU - Moon, Dong Chan
AU - Shin, Moo Whan
PY - 2000/2/3
Y1 - 2000/2/3
N2 - Recessed gate GaN MESFETs have been fabricated by employing a new photoelectrochemical etching method which utilises a photoresistive mask and KOH based etchant. The etching rate of the etchant with 1.0mol% of KOH for n-GaN is as high as 1600 angstrom/min at an Hg illumination intensity of 35mW/cm2. The fabricated GaN MESFET exhibits current saturation at Vds = 4V and pinch-off at Vgs = -3V with a peak drain current of approx. 240mA/mm at 300K. The DC performance of the device does not change considerably with temperature in the range 300-473K.
AB - Recessed gate GaN MESFETs have been fabricated by employing a new photoelectrochemical etching method which utilises a photoresistive mask and KOH based etchant. The etching rate of the etchant with 1.0mol% of KOH for n-GaN is as high as 1600 angstrom/min at an Hg illumination intensity of 35mW/cm2. The fabricated GaN MESFET exhibits current saturation at Vds = 4V and pinch-off at Vgs = -3V with a peak drain current of approx. 240mA/mm at 300K. The DC performance of the device does not change considerably with temperature in the range 300-473K.
UR - http://www.scopus.com/inward/record.url?scp=0034598684&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034598684&partnerID=8YFLogxK
U2 - 10.1049/el:20000215
DO - 10.1049/el:20000215
M3 - Article
VL - 36
SP - 265
EP - 267
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 3
ER -