High-voltage wordline generator for low-power program operation in NAND flash memories

Sam Kyu Won, Yujong Noh, Hyunchul Cho, Jeil Ryu, Sungwook Choi, Sungdae Choi, Duckju Kim, Junseop Chung, Bongseok Han, Eui-Young Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

High-voltage wordline generation circuit with stage-controlled charge pump is developed for low-power NAND flash memories. The proposed stage-controlled charge pump controls an optimized number of stages according to the required program voltage. The proposed high-voltage generator provides sleep-mode operation by turning off the driving clock and regulators during the program verify operation. Using these techniques, the proposed high-voltage generator reduces about 50 percent of power consumption in comparison with a conventional scheme.

Original languageEnglish
Title of host publication2011 Proceedings of Technical Papers
Subtitle of host publicationIEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011
Pages169-172
Number of pages4
DOIs
Publication statusPublished - 2011 Dec 1
Event7th IEEE Asian Solid-State Circuits Conference, A-SSCC 2011 - Jeju, Korea, Republic of
Duration: 2011 Nov 142011 Nov 16

Publication series

Name2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011

Other

Other7th IEEE Asian Solid-State Circuits Conference, A-SSCC 2011
CountryKorea, Republic of
CityJeju
Period11/11/1411/11/16

Fingerprint

Flash memory
Electric potential
Pumps
Clocks
Electric power utilization
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Won, S. K., Noh, Y., Cho, H., Ryu, J., Choi, S., Choi, S., ... Chung, E-Y. (2011). High-voltage wordline generator for low-power program operation in NAND flash memories. In 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011 (pp. 169-172). [6123629] (2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011). https://doi.org/10.1109/ASSCC.2011.6123629
Won, Sam Kyu ; Noh, Yujong ; Cho, Hyunchul ; Ryu, Jeil ; Choi, Sungwook ; Choi, Sungdae ; Kim, Duckju ; Chung, Junseop ; Han, Bongseok ; Chung, Eui-Young. / High-voltage wordline generator for low-power program operation in NAND flash memories. 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011. 2011. pp. 169-172 (2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011).
@inproceedings{b87e972cb9b1491a925438b91c1dea96,
title = "High-voltage wordline generator for low-power program operation in NAND flash memories",
abstract = "High-voltage wordline generation circuit with stage-controlled charge pump is developed for low-power NAND flash memories. The proposed stage-controlled charge pump controls an optimized number of stages according to the required program voltage. The proposed high-voltage generator provides sleep-mode operation by turning off the driving clock and regulators during the program verify operation. Using these techniques, the proposed high-voltage generator reduces about 50 percent of power consumption in comparison with a conventional scheme.",
author = "Won, {Sam Kyu} and Yujong Noh and Hyunchul Cho and Jeil Ryu and Sungwook Choi and Sungdae Choi and Duckju Kim and Junseop Chung and Bongseok Han and Eui-Young Chung",
year = "2011",
month = "12",
day = "1",
doi = "10.1109/ASSCC.2011.6123629",
language = "English",
isbn = "9781467303989",
series = "2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011",
pages = "169--172",
booktitle = "2011 Proceedings of Technical Papers",

}

Won, SK, Noh, Y, Cho, H, Ryu, J, Choi, S, Choi, S, Kim, D, Chung, J, Han, B & Chung, E-Y 2011, High-voltage wordline generator for low-power program operation in NAND flash memories. in 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011., 6123629, 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011, pp. 169-172, 7th IEEE Asian Solid-State Circuits Conference, A-SSCC 2011, Jeju, Korea, Republic of, 11/11/14. https://doi.org/10.1109/ASSCC.2011.6123629

High-voltage wordline generator for low-power program operation in NAND flash memories. / Won, Sam Kyu; Noh, Yujong; Cho, Hyunchul; Ryu, Jeil; Choi, Sungwook; Choi, Sungdae; Kim, Duckju; Chung, Junseop; Han, Bongseok; Chung, Eui-Young.

2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011. 2011. p. 169-172 6123629 (2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - High-voltage wordline generator for low-power program operation in NAND flash memories

AU - Won, Sam Kyu

AU - Noh, Yujong

AU - Cho, Hyunchul

AU - Ryu, Jeil

AU - Choi, Sungwook

AU - Choi, Sungdae

AU - Kim, Duckju

AU - Chung, Junseop

AU - Han, Bongseok

AU - Chung, Eui-Young

PY - 2011/12/1

Y1 - 2011/12/1

N2 - High-voltage wordline generation circuit with stage-controlled charge pump is developed for low-power NAND flash memories. The proposed stage-controlled charge pump controls an optimized number of stages according to the required program voltage. The proposed high-voltage generator provides sleep-mode operation by turning off the driving clock and regulators during the program verify operation. Using these techniques, the proposed high-voltage generator reduces about 50 percent of power consumption in comparison with a conventional scheme.

AB - High-voltage wordline generation circuit with stage-controlled charge pump is developed for low-power NAND flash memories. The proposed stage-controlled charge pump controls an optimized number of stages according to the required program voltage. The proposed high-voltage generator provides sleep-mode operation by turning off the driving clock and regulators during the program verify operation. Using these techniques, the proposed high-voltage generator reduces about 50 percent of power consumption in comparison with a conventional scheme.

UR - http://www.scopus.com/inward/record.url?scp=84863020246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863020246&partnerID=8YFLogxK

U2 - 10.1109/ASSCC.2011.6123629

DO - 10.1109/ASSCC.2011.6123629

M3 - Conference contribution

SN - 9781467303989

T3 - 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011

SP - 169

EP - 172

BT - 2011 Proceedings of Technical Papers

ER -

Won SK, Noh Y, Cho H, Ryu J, Choi S, Choi S et al. High-voltage wordline generator for low-power program operation in NAND flash memories. In 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011. 2011. p. 169-172. 6123629. (2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011). https://doi.org/10.1109/ASSCC.2011.6123629