Highly conductive and flexible fiber for textile electronics obtained by extremely low-temperature atomic layer deposition of Pt

Jaehong Lee, Jaehong Yoon, Hyun Gu Kim, Subin Kang, Woo Suk Oh, Hassan Algadi, Saleh Al-Sayari, Bonggeun Shong, Soo Hyun Kim, Hyungjun Kim, Taeyoon Lee, Han Bo Ram Lee

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

Thermal atomic layer deposition (ALD) of metal has generally been achieved at high temperatures of around 300°C or at relatively low temperatures with highly reactive counter reactants, including plasma radicals and O3, which can induce severe damage to substrates. Here, the growth of metallic Pt layers by ALD at a low temperature of 80°C is achieved by using [(1,2,5,6-η)-1,5-hexadiene]-dimethyl-platinum(II) (HDMP) and O2 as the Pt precursor and counter reactant, respectively. ALD results in the successful growth of continuous Pt layers at the low temperature without any reactive reactants owing to the low activation energy of the HDMP precursor for surface reactions. Because of the high reactivity of the precursor, the growth of a pure Pt layer is achieved on various thermally weak substrates, leading to the fabrication of high-performance conductive cotton fibers by ALD. A capacitive-type textile pressure sensor is successfully demonstrated by stacking elastomeric rubber-coated conductive cotton fibers perpendicularly and integrating them onto a fabric with a 7 × 8 array configuration to identify the features of the applied pressure, which can be effectively utilized as a new platform for future wearable and textile electronics.

Original languageEnglish
Article numbere331
JournalNPG Asia Materials
Volume8
Issue number11
DOIs
Publication statusPublished - 2016 Nov 25

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1D1A1B03935611) and the MOTIE (Ministry of Trade, Industry & Energy; 10053098) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. This work was also supported by the Priority Research Centers Program (Grant No. 2009-0093823) through the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology (MEST), the R&D program of MOTIE/KEIT (Korea Evaluation Institute of Industrial Technology) [10064081, Development of fiber-based flexible multimodal pressure sensor and algorithm for gesture/posturerecognizable wearable devices], and the Ministry of Higher Education, Kingdom of Saudi Arabia for supporting this research through a grant (PCSED- 009-14) under the Promising Centre for Sensors and Electronic Devices (PCSED) at Najran University, Kingdom of Saudi Arabia.

All Science Journal Classification (ASJC) codes

  • Modelling and Simulation
  • Materials Science(all)
  • Condensed Matter Physics

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