Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source

Seung Yeop Myong, Hyung Kew Lee, Euisik Yoon, Koeng Su Lim

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Boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) films with a low-concentration of hydrogen-dilution were grown by a mercury-sensitized photo-chemical vapor deposition method using silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) as a carbon source. From the Raman and FTIR spectrum measurements, the p-nc-SiC:H film is composed of nanosize crystal silicon embedded in a hydrogenated amorphous silicon-carbide matrix. A dark conductivity as high as 1.7 × 10-1 S/cm, with an optical bandgap is 2.0 eV, and a crystal volume fraction of 50%, were obtained. We tested these films as window material for amorphous silicon solar cells, obtaining an initial conversion efficiency of 10.4% without using any back reflectors.

Original languageEnglish
Pages (from-to)131-136
Number of pages6
JournalJournal of Non-Crystalline Solids
Issue number2-3
Publication statusPublished - 2002 Mar 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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