Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source

Seung Yeop Myong, Hyung Kew Lee, Euisik Yoon, Koeng Su Lim

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) films with a low-concentration of hydrogen-dilution were grown by a mercury-sensitized photo-chemical vapor deposition method using silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) as a carbon source. From the Raman and FTIR spectrum measurements, the p-nc-SiC:H film is composed of nanosize crystal silicon embedded in a hydrogenated amorphous silicon-carbide matrix. A dark conductivity as high as 1.7 × 10-1 S/cm, with an optical bandgap is 2.0 eV, and a crystal volume fraction of 50%, were obtained. We tested these films as window material for amorphous silicon solar cells, obtaining an initial conversion efficiency of 10.4% without using any back reflectors.

Original languageEnglish
Pages (from-to)131-136
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume298
Issue number2-3
DOIs
Publication statusPublished - 2002 Mar 1

Fingerprint

Nanocrystalline silicon
Boron
Silicon carbide
silicon carbides
Dilution
dilution
Hydrogen
Chemical vapor deposition
Ethylene
boron
ethylene
Carbon
vapor deposition
Amorphous silicon
amorphous silicon
carbon
hydrogen
diborane
Silanes
Crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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title = "Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source",
abstract = "Boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) films with a low-concentration of hydrogen-dilution were grown by a mercury-sensitized photo-chemical vapor deposition method using silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) as a carbon source. From the Raman and FTIR spectrum measurements, the p-nc-SiC:H film is composed of nanosize crystal silicon embedded in a hydrogenated amorphous silicon-carbide matrix. A dark conductivity as high as 1.7 × 10-1 S/cm, with an optical bandgap is 2.0 eV, and a crystal volume fraction of 50{\%}, were obtained. We tested these films as window material for amorphous silicon solar cells, obtaining an initial conversion efficiency of 10.4{\%} without using any back reflectors.",
author = "{Yeop Myong}, Seung and {Kew Lee}, Hyung and Euisik Yoon and {Su Lim}, Koeng",
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Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source. / Yeop Myong, Seung; Kew Lee, Hyung; Yoon, Euisik; Su Lim, Koeng.

In: Journal of Non-Crystalline Solids, Vol. 298, No. 2-3, 01.03.2002, p. 131-136.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source

AU - Yeop Myong, Seung

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AU - Su Lim, Koeng

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AB - Boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) films with a low-concentration of hydrogen-dilution were grown by a mercury-sensitized photo-chemical vapor deposition method using silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) as a carbon source. From the Raman and FTIR spectrum measurements, the p-nc-SiC:H film is composed of nanosize crystal silicon embedded in a hydrogenated amorphous silicon-carbide matrix. A dark conductivity as high as 1.7 × 10-1 S/cm, with an optical bandgap is 2.0 eV, and a crystal volume fraction of 50%, were obtained. We tested these films as window material for amorphous silicon solar cells, obtaining an initial conversion efficiency of 10.4% without using any back reflectors.

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