Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells

Dong Won Kang, Jang Yeon Kwon, Jenny Shim, Heon Min Lee, Min Koo Han

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO 2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10 nm) in case of the TiO 2/ZnO bilayer. GaN ARL can replace the TiO 2/ZnO bilayer ARL in terms of high performance and simple fabrication process.

Original languageEnglish
Pages (from-to)317-321
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume105
DOIs
Publication statusPublished - 2012 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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