Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO 2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10 nm) in case of the TiO 2/ZnO bilayer. GaN ARL can replace the TiO 2/ZnO bilayer ARL in terms of high performance and simple fabrication process.
Bibliographical noteFunding Information:
This work was supported by the Global Leading Technology Program (No. 2011T100100039 ) of the Office of Strategic R&D Planning (OSP) funded by the Ministry of Knowledge Economy, Republic of Korea.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films