Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells

Dong Won Kang, Jang-Yeon Kwon, Jenny Shim, Heon Min Lee, Min Koo Han

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO 2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10 nm) in case of the TiO 2/ZnO bilayer. GaN ARL can replace the TiO 2/ZnO bilayer ARL in terms of high performance and simple fabrication process.

Original languageEnglish
Pages (from-to)317-321
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume105
DOIs
Publication statusPublished - 2012 Oct 1

Fingerprint

Silicon solar cells
Oxides
Microcrystalline silicon
Conductive films
Thin film solar cells
Magnetron sputtering
Hydrogen
Plasmas
Fabrication

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Cite this

@article{abe949ec74e541c38c42676e2c636847,
title = "Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells",
abstract = "Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81{\%}) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36{\%}) with the widely used TiO 2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10 nm) in case of the TiO 2/ZnO bilayer. GaN ARL can replace the TiO 2/ZnO bilayer ARL in terms of high performance and simple fabrication process.",
author = "Kang, {Dong Won} and Jang-Yeon Kwon and Jenny Shim and Lee, {Heon Min} and Han, {Min Koo}",
year = "2012",
month = "10",
day = "1",
doi = "10.1016/j.solmat.2012.06.041",
language = "English",
volume = "105",
pages = "317--321",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",

}

Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells. / Kang, Dong Won; Kwon, Jang-Yeon; Shim, Jenny; Lee, Heon Min; Han, Min Koo.

In: Solar Energy Materials and Solar Cells, Vol. 105, 01.10.2012, p. 317-321.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells

AU - Kang, Dong Won

AU - Kwon, Jang-Yeon

AU - Shim, Jenny

AU - Lee, Heon Min

AU - Han, Min Koo

PY - 2012/10/1

Y1 - 2012/10/1

N2 - Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO 2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10 nm) in case of the TiO 2/ZnO bilayer. GaN ARL can replace the TiO 2/ZnO bilayer ARL in terms of high performance and simple fabrication process.

AB - Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO 2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10 nm) in case of the TiO 2/ZnO bilayer. GaN ARL can replace the TiO 2/ZnO bilayer ARL in terms of high performance and simple fabrication process.

UR - http://www.scopus.com/inward/record.url?scp=84864469955&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864469955&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2012.06.041

DO - 10.1016/j.solmat.2012.06.041

M3 - Article

AN - SCOPUS:84864469955

VL - 105

SP - 317

EP - 321

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

ER -