Highly enhanced electron injection in organic light-emitting diodes with an n-type semiconducting MnO2 layer

Hyunbok Lee, Jeihyun Lee, Pyungeun Jeon, Kwangho Jeong, Yeonjin Yi, Tae Gun Kim, Jeong Won Kim, Jin Woo Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Highly enhanced electron injection is demonstrated with a thin manganese dioxide (MnO2) electron injection layer (EIL) in Alq 3-based organic light-emitting diodes. Insertion of the MnO 2 EIL between the Al cathode and Alq3 results in highly improved device characteristics. In situ photoelectron spectroscopy shows remarkable reduction of the electron injection barrier without significant chemical reactions between Alq3 and MnO2, which could induce Alq3 destruction. The reduction of the electron injection barrier is due to the n-type doping effect, and the lack of strong interfacial reaction is advantageous with regards to more efficient electron injection than a conventional LiF EIL. These properties render the MnO2, a potential EIL.

Original languageEnglish
Pages (from-to)820-825
Number of pages6
JournalOrganic Electronics
Volume13
Issue number5
DOIs
Publication statusPublished - 2012 May

Fingerprint

Electron injection
Organic light emitting diodes (OLED)
light emitting diodes
injection
electrons
Photoelectron spectroscopy
Surface chemistry
dioxides
destruction
Manganese
manganese
insertion
Chemical reactions
chemical reactions
Cathodes
cathodes
Doping (additives)
photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Lee, Hyunbok ; Lee, Jeihyun ; Jeon, Pyungeun ; Jeong, Kwangho ; Yi, Yeonjin ; Kim, Tae Gun ; Kim, Jeong Won ; Lee, Jin Woo. / Highly enhanced electron injection in organic light-emitting diodes with an n-type semiconducting MnO2 layer. In: Organic Electronics. 2012 ; Vol. 13, No. 5. pp. 820-825.
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Highly enhanced electron injection in organic light-emitting diodes with an n-type semiconducting MnO2 layer. / Lee, Hyunbok; Lee, Jeihyun; Jeon, Pyungeun; Jeong, Kwangho; Yi, Yeonjin; Kim, Tae Gun; Kim, Jeong Won; Lee, Jin Woo.

In: Organic Electronics, Vol. 13, No. 5, 05.2012, p. 820-825.

Research output: Contribution to journalArticle

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AU - Lee, Hyunbok

AU - Lee, Jeihyun

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AU - Yi, Yeonjin

AU - Kim, Tae Gun

AU - Kim, Jeong Won

AU - Lee, Jin Woo

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AB - Highly enhanced electron injection is demonstrated with a thin manganese dioxide (MnO2) electron injection layer (EIL) in Alq 3-based organic light-emitting diodes. Insertion of the MnO 2 EIL between the Al cathode and Alq3 results in highly improved device characteristics. In situ photoelectron spectroscopy shows remarkable reduction of the electron injection barrier without significant chemical reactions between Alq3 and MnO2, which could induce Alq3 destruction. The reduction of the electron injection barrier is due to the n-type doping effect, and the lack of strong interfacial reaction is advantageous with regards to more efficient electron injection than a conventional LiF EIL. These properties render the MnO2, a potential EIL.

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