Highly enhanced electron injection is demonstrated with a thin manganese dioxide (MnO2) electron injection layer (EIL) in Alq 3-based organic light-emitting diodes. Insertion of the MnO 2 EIL between the Al cathode and Alq3 results in highly improved device characteristics. In situ photoelectron spectroscopy shows remarkable reduction of the electron injection barrier without significant chemical reactions between Alq3 and MnO2, which could induce Alq3 destruction. The reduction of the electron injection barrier is due to the n-type doping effect, and the lack of strong interfacial reaction is advantageous with regards to more efficient electron injection than a conventional LiF EIL. These properties render the MnO2, a potential EIL.
Bibliographical noteFunding Information:
This work was supported by Brain Korea 21 (BK21) project of the ministry of Education, Science and Technology and by a research project of the National Research Foundation of Korea (Grant Nos. 2011-0004748 and 2011-0026100 ).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry