Abstract
2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal–oxide–semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics.
| Original language | English |
|---|---|
| Pages (from-to) | 5720-5727 |
| Number of pages | 8 |
| Journal | Small |
| Volume | 12 |
| Issue number | 41 |
| DOIs | |
| Publication status | Published - 2016 Nov 2 |
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All Science Journal Classification (ASJC) codes
- Biotechnology
- Biomaterials
- Chemistry(all)
- Materials Science(all)
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Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide. / Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il Kwon; Kim, Hyungjun; Ahn, Jong-Hyun.
In: Small, Vol. 12, No. 41, 02.11.2016, p. 5720-5727.Research output: Contribution to journal › Article
TY - JOUR
T1 - Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide
AU - Das, Tanmoy
AU - Chen, Xiang
AU - Jang, Houk
AU - Oh, Il Kwon
AU - Kim, Hyungjun
AU - Ahn, Jong-Hyun
PY - 2016/11/2
Y1 - 2016/11/2
N2 - 2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal–oxide–semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics.
AB - 2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal–oxide–semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics.
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U2 - 10.1002/smll.201602101
DO - 10.1002/smll.201602101
M3 - Article
AN - SCOPUS:84987660573
VL - 12
SP - 5720
EP - 5727
JO - Small
JF - Small
SN - 1613-6810
IS - 41
ER -